MTP5N40E, MTP5N60, MTP5N80 Selling Leads, Datasheet
MFG:ON Package Cooled:TO-220 D/C:dc99
MTP5N40E, MTP5N60, MTP5N80 Datasheet download
Part Number: MTP5N40E
MFG: ON
Package Cooled: TO-220
D/C: dc99
MTP5N40E, MTP5N60, MTP5N80
- Table of contents:
Info of MTP5N40E
Info of MTP5N60
Info of MTP5N80
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About MTP5N40E
PDF/DataSheet Download
Datasheet: MTP5N40E
File Size: 264913 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
Download : Click here to Download
About MTP 3-Phase Rectifier Series
PDF/DataSheet Download
Datasheet: MTP 3-Phase Rectifier Series
File Size: 124897 KB
Manufacturer:
Download : Click here to Download
MTP5N40E General Description
This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTP5N40E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
400 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
400 |
Vdc |
| GatetoSource Voltage - Continuous - Nonrepetitive |
VGS VGSM |
± 20 ±40 |
Vdc Vpk |
| Drain Current - Continuous - Pulsed |
ID IDM |
5.0 10 |
Adc |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
75 0.6 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
MTP5N40E Features
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
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