MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOIC-8 D/C:96
NDH8436, NDH8447, NDH8502 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: SOIC-8
D/C: 96
Description: MOSFET N-CH 30V SOT-8
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PDF/DataSheet Download
Datasheet: NDH8436
File Size: 300348 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDH8447
File Size: 96490 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDH8502P
File Size: 74107 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDH8436 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.8A |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 5.8A, 10V |
| Input Capacitance (Ciss) @ Vds | 560pF @ 15V |
| Power - Max | 900mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | SOT-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NDH8436 NDH8436 NDH8436CT ND NDH8436CTND NDH8436CT |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
|
Symbol |
Parameter |
NDH8447 |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
-30 -20 -4.4 -20 1.8 1 0.9 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | (Note 1a) | ||
|
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) (Note 1c) | ||
| TJ,TSTG | Operating and Storage Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
70 |
°C/W °C/W |
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