NDH853N, NDH854P, NDHV210AFA-S08 Selling Leads, Datasheet
MFG:7 Package Cooled:NS D/C:09+
NDH853N, NDH854P, NDHV210AFA-S08 Datasheet download
Part Number: NDH853N
MFG: 7
Package Cooled: NS
D/C: 09+
NDH853N, NDH854P, NDHV210AFA-S08
- Table of contents:
Info of NDH853N
Info of NDH854P
Info of NDHV210AFA-S08
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About NDH853N
PDF/DataSheet Download
Datasheet: NDH853N
File Size: 84638 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDH854P
PDF/DataSheet Download
Datasheet: NDH854P
File Size: 87926 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDH8301N
PDF/DataSheet Download
Datasheet: NDH8301N
File Size: 216852 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDH853N General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.
NDH853N Maximum Ratings
|
Symbol |
Parameter |
NDH853N |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ±20 7.6 23 1.8 1 0.9 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | (Note 1a) | ||
|
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) (Note 1c) | ||
| TJ,TSTG | Operating and Storage Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
70 |
°C/W °C/W |
NDH853N Features
`7.6 A, 30 V. RDS(ON) = 0.017 @ VGS = 10 V RDS(ON) = 0.025 @ VGS = 4.5 V.
`High density cell design for extremely low RDS(ON)
`Proprietary SuperSOTTM-8 small outline surface mount
`package with high power and current handling capability.
`High density cell design for extremely low RDS(ON)
`Proprietary SuperSOTTM-8 small outline surface mount
`package with high power and current handling capability.
NDH853N Connection Diagram
NDH854P General Description
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDH854P Maximum Ratings
|
Symbol |
Parameter |
NDH854P |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
-30 ±20 -5.1 -15 1.8 1 0.9 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | (Note 1a) | ||
|
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) (Note 1c) | ||
| TJ,TSTG | Operating and Storage Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
70 |
°C/W °C/W |
NDH854P Features
`-5.1 A, -30 V. RDS(ON) = 0.032 @ VGS = -10 V RDS(ON) = 0.052 @ VGS = -4.5V.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.
NDH854P Connection Diagram
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