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NDH8303, NDH8303N, NDH8304

NDH8303, NDH8303N, NDH8304 Selling Leads, Datasheet

MFG:163  Package Cooled:SOP-8  D/C:SOP-8

NDH8303, NDH8303N, NDH8304 Picture

NDH8303, NDH8303N, NDH8304 Datasheet download

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Part Number: NDH8303

 

MFG: 163

Package Cooled: SOP-8

D/C: SOP-8

 

 

 
 
 
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About NDH8303N

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Datasheet: NDH8303N

File Size: 74191 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About NDH8303N

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Datasheet: NDH8303N

File Size: 74191 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About NDH8304

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Datasheet: NDH8304

File Size: 72703 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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NDH8303N General Description

SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

NDH8303N Maximum Ratings

Symbol
Parameter
NDH8303N
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage - Continuous
20
±8
3.8
15
0.8
-55 to 150
V
V
A
W

°C
ID
Drain Current Continuous Pulsed (Note 1)
PD
Maximum Power Dissipation (Note 1 )
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)

156
40

°C/W
°C/W

<TABLE height=136 w

NDH8303N Features

`3.8 A, 20 V. RDS(ON) = 0.035  @ VGS = 4.5 V RDS(ON) = 0.045  @ VGS = 2.7 V.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.

NDH8303N Connection Diagram

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