NDH8503, NDH8503N, NDH8504 Selling Leads, Datasheet
MFG:338 Package Cooled:NS D/C:SOIC-8
NDH8503, NDH8503N, NDH8504 Datasheet download
Part Number: NDH8503
MFG: 338
Package Cooled: NS
D/C: SOIC-8
NDH8503, NDH8503N, NDH8504
- Table of contents:
Info of NDH8503
Info of NDH8503N
Info of NDH8504
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About NDH8503N
PDF/DataSheet Download
Datasheet: NDH8503N
File Size: 72557 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDH8503N
PDF/DataSheet Download
Datasheet: NDH8503N
File Size: 72557 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDH8504P
PDF/DataSheet Download
Datasheet: NDH8504P
File Size: 215836 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDH8503N General Description
SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
NDH8503N Maximum Ratings
|
Symbol |
Parameter |
NDH8303N |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
30 ±20 3.8 10.5 0.8 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | (Note 1) | ||
|
PD |
Maximum Power Dissipation | (Note 1 ) | ||
| TJ,TSTG | Operating and Storage Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1) (Note 1) |
156 |
°C/W °C/W |
NDH8503N Features
`3.8 A, 30 V. RDS(ON) = 0.033 @ VGS = 10 V RDS(ON) = 0.05 @ VGS = 4.5 V.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.
NDH8503N Connection Diagram
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