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PHB1006, PHB100N03LT, PHB101N03LT

Table of contents:
Info of PHB1006
Info of PHB100N03LT
Info of PHB101N03LT

PHB1006, PHB100N03LT, PHB101N03LT Selling Leads, Datasheet

MFG:NIEC D/C:07+

PHB1006, PHB100N03LT, PHB101N03LT Picture

PHB1006, PHB100N03LT, PHB101N03LT Datasheet download

Five Points

Part Number: PHB1006

MFG: NIEC

Package Cooled:

D/C: 07+

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PHB100N03LT General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHB100N03LT in SOT404 (D2-PAK).

PHB100N03LT Maximum Ratings

Symbol	Parameter	Conditions	Min	Max	Unit
V_DS	drain-source voltage (DC)	T_j =25 to 175	-	25	V
V_DGR	drain-gate voltage (DC)	T_j =25 to 175 ; R_GS = 20 k	-	25	V
V_GS	gate-source voltage		-	±15	V
VGSM	peak gate-source voltage	T_P 50 s; pulsed; duty cycle = 25%		±20
I_D	drain current (DC)	T_mb = 25 ; V_GS = 5 V; Figure 2 and 3	-	75	A
I_D	drain current (DC)	T_mb = 100 ; V_GS = 5 V; Figure 2	-	67	A
I_DM	peak drain current	T_mb = 100 ; pulsed; t_p 10 s; Figure 3	-	240	A
P_tot	total power dissipation	T_mb = 25 ; Figure 1	-	125	W
T_stg	storage temperature		-55	+175
T_j	junction temperature		-55	+175
Source-drain diode
I_S	source (diode forward) current (DC)	T_mb = 25	-	75	A
I_SM	peak source (diode forward) current	T_mb = 25 ; pulsed; tp 10 s	-	240	A
Avalanche ruggedness
E_AS	non-repetitive avalanche energy	unclamped inductive load; I_D =75 A; t_p = 0.2 ms; V_DD 55 V; R_GS = 50 ; V_GS = 5 V; starting at Tj = 25 ;Figure 4	-	240	mJ
I_AS	non-repetitive avalanche current	unclamped inductive load; V_DD 15 V; R_GS = 50 ;V_GS = 5 V; Figure 4	-	75	mJ

PHB100N03LT Features

·TrenchMOS™ technology
·Low on-state resistance
·Avalanche ruggedness rated
·Logic level compatible
·Surface mount package.

PHB100N03LT Typical Application

·DC to DC converters
·Synchronous rectification.

PHB100N03LT Connection Diagram

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