PHB12NQ15T, PHB130N03LT, PHB130N03T Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:06+
PHB12NQ15T, PHB130N03LT, PHB130N03T Datasheet download
Part Number: PHB12NQ15T
MFG: PHILIPS
Package Cooled: .
D/C: 06+
PHB12NQ15T, PHB130N03LT, PHB130N03T
- Table of contents:
Info of PHB12NQ15T
Info of PHB130N03LT
Info of PHB130N03T
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About PHB12NQ15T
PDF/DataSheet Download
Datasheet: PHB12NQ15T
File Size: 114535 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB130N03LT
PDF/DataSheet Download
Datasheet: PHB130N03LT
File Size: 52735 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB130N03T
PDF/DataSheet Download
Datasheet: PHB130N03T
File Size: 67017 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB12NQ15T General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB12NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.
The PHD12NQ15T is supplied in the SOT428 (DPAK) surface mounting package.
PHB12NQ15T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS | Drain-source voltage | Tj =25 to 175 | - | 150 | V |
| VDGR | Drain-gate voltage | Tj =25 to 175 ; RGS = 20 k | - | 150 | V |
| VGS | Gate-source voltage | -- | ±20 | V | |
| ID | Continuous drain current | Tmb = 25 ; VGS = 10 V | 12.5 | A | |
| Tmb = 100 ; VGS = 10 V | - | 8.8 | A | ||
| IDM | Pulsed drain current | Tmb = 25 | - | 50 | A |
| PD | Total power dissipation | Tmb = 25 | - | 88 | W |
| Tj, Tstg | Operating junction and storage temperature |
-55 | 175 |
PHB12NQ15T Features
• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
• Low on-state resistance
• Fast switching
• Low thermal resistance
PHB12NQ15T Connection Diagram
PHB130N03LT General Description
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
PHB130N03LT Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tmb = 25 ;VGS = 5 V Tmb = 100 ;VGS = 5 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
30 30 ± 13 75 75 240 187 175 |
V V V A A A W |
PHB130N03LT Features
• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHB130N03LT Connection Diagram
PHB130N03T General Description
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHB130N03T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj |
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC)1 Drain current (DC)1 Drain current (pulse peak value) Total power dissipation Storage & operating temperature |
- RGS = 20 k - Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 - |
- - - - - - - - 55 |
30 30 20 75 75 240 188 175 |
V V V A A A W |
PHB130N03T Connection Diagram
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