PHB101N04T, PHB101NQ03LT, PHB101NQ04T Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:05+/06+
PHB101N04T, PHB101NQ03LT, PHB101NQ04T Datasheet download
Part Number: PHB101N04T
MFG: PHILIPS
Package Cooled: .
D/C: 05+/06+
PHB101N04T, PHB101NQ03LT, PHB101NQ04T
- Table of contents:
Info of PHB101N04T
Info of PHB101NQ03LT
Info of PHB101NQ04T
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About PHB100N03LT
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Datasheet: PHB100N03LT
File Size: 339176 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About PHB101NQ03LT
PDF/DataSheet Download
Datasheet: PHB101NQ03LT
File Size: 287338 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB101NQ04T
PDF/DataSheet Download
Datasheet: PHB101NQ04T
File Size: 97268 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB101NQ03LT General Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology.
Product availability:
PHB101NQ03LT in SOT404 (D2-PAK)
PHD101NQ03LT in SOT428 (D-PAK).
Product availability:
PHB101NQ03LT in SOT404 (D2-PAK)
PHD101NQ03LT in SOT428 (D-PAK).
PHB101NQ03LT Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 175 | - | 30 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 30 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| VGSM | gate-source voltage | TP 50 s; pulsed; duty cycle = 25%;Tj 150 | ±25 | ||
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
| Tmb = 100 ; VGS = 10 V; Figure 2 | - | 75 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 166 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tmb = 25 | - | 74 | A | |
| ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 43A; tp = 0.19 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 |
- | 185 | mJ |
PHB101NQ03LT Features
·Low gate charge
·Low on-state resistance.
·Low on-state resistance.
PHB101NQ03LT Typical Application
·Optimized as a control FET in DC to DC convertors
PHB101NQ03LT Connection Diagram
PHB101NQ04T General Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.
PHB101NQ04T Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 175 | - | 40 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 40 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
| Tmb = 100 ; VGS = 10 V; Figure 2 | - | 71 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 157 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
| ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 45 A; tp = 0.17 ms; VDD 55 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 200 | mJ |
PHB101NQ04T Features
·Standard level threshold
·Very low on-state resistance.
·Very low on-state resistance.
PHB101NQ04T Typical Application
·Motors, lamps, solenoids
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.
PHB101NQ04T Connection Diagram
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