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PHB110NQ06LT, PHB110NQ08LT, PHB110NQ08T

PHB110NQ06LT, PHB110NQ08LT, PHB110NQ08T Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:.  D/C:06+

PHB110NQ06LT, PHB110NQ08LT, PHB110NQ08T Picture

PHB110NQ06LT, PHB110NQ08LT, PHB110NQ08T Datasheet download

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Part Number: PHB110NQ06LT

 

MFG: PHILIPS

Package Cooled: .

D/C: 06+

 

 

 
 
 
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PHB110NQ06LT Suppliers

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  • PHB18NQ10T

  • Vendor: PHILIPS D/C: 04+& Qty: 40000  Adddate: 2024-04-30
  • Inquire Now
  • extra technology limited   China
    Contact: Mr.BecksBao   MSN:baoyaming221@hotmail.com
    Tel: 86-010-62670478
    Fax: 86-010-62670458
    (0)
  • PHB29N08T

  • D/C: 01+&   Adddate: 2024-04-30
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About PHB110NQ06LT

PDF/DataSheet Download

Datasheet: PHB110NQ06LT

File Size: 96367 KB

Manufacturer: PHILIPS [Philips Semiconductors]

Download : Click here to Download

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PHB110NQ08LT Suppliers

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  • PHB18NQ10T

  • Vendor: PHILIPS D/C: 04+& Qty: 40000  Adddate: 2024-04-30
  • Inquire Now
  • extra technology limited   China
    Contact: Mr.BecksBao   MSN:baoyaming221@hotmail.com
    Tel: 86-010-62670478
    Fax: 86-010-62670458
    (0)
  • PHB29N08T

  • D/C: 01+&   Adddate: 2024-04-30
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About PHB110NQ08LT

PDF/DataSheet Download

Datasheet: PHB110NQ08LT

File Size: 93460 KB

Manufacturer: PHILIPS [Philips Semiconductors]

Download : Click here to Download

Related PDF Download

Related Part Number

PHB110NQ08T Suppliers

More PHB110NQ08T Suppliers

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  • PHB18NQ10T

  • Vendor: PHILIPS D/C: 04+& Qty: 40000  Adddate: 2024-04-30
  • Inquire Now
  • extra technology limited   China
    Contact: Mr.BecksBao   MSN:baoyaming221@hotmail.com
    Tel: 86-010-62670478
    Fax: 86-010-62670458
    (0)
  • PHB29N08T

  • D/C: 01+&   Adddate: 2024-04-30
  • Inquire Now
  • orientelec   China
    Contact: Ms.Jessica Ren   MSN:jessica@orientelec.cn
    Tel: 86-10-62103873/62101821
    Fax: 86-10-62102720
    (5)

About PHB110NQ08T

PDF/DataSheet Download

Datasheet: PHB110NQ08T

File Size: 91928 KB

Manufacturer: PHILIPS [Philips Semiconductors]

Download : Click here to Download

Related PDF Download

Related Part Number

PHB110NQ06LT General Description

Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

PHB110NQ06LT Maximum Ratings

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 55 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 55 V
VGS gate-source voltage (DC)   - ±15 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 75 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 200 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 240 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 75 A;
tp = 0.1 ms; VDD 55 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25
- 280 mJ

PHB110NQ06LT Features

·Logic level threshold
·Low on-state resistance.

PHB110NQ06LT Typical Application

·Motors, lamps, solenoids
·DC-to-DC converters
·Motors, lamps, solenoids
·DC-to-DC converters

PHB110NQ06LT Connection Diagram

PHB110NQ08LT General Description

Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS(TM) technology.

PHB110NQ08LT Features

Logic level threshold
Very low on-state resistance.

PHB110NQ08LT Typical Application

Motors, lamps, solenoids
Uninterruptible power supplies
DC-to-DC converters
General industrial applications.

PHB110NQ08LT Connection Diagram

PHB110NQ08T General Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.

PHB110NQ08T Maximum Ratings

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 75 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 75 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 75 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 230 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 240 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 75 A;
tp = 0.15 ms; VDD 75 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25
- 560 mJ

PHB110NQ08T Features

·Standard level threshold
·Very low on-state resistance.

PHB110NQ08T Typical Application

·Motors, lamps, solenoids
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.

PHB110NQ08T Connection Diagram

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