PHB108NQ03LT, PHB10N40, PHB10NQ20T Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:05+/06+
PHB108NQ03LT, PHB10N40, PHB10NQ20T Datasheet download
Part Number: PHB108NQ03LT
MFG: PHILIPS
Package Cooled: .
D/C: 05+/06+
PHB108NQ03LT, PHB10N40, PHB10NQ20T
- Table of contents:
Info of PHB108NQ03LT
Info of PHB10N40
Info of PHB10NQ20T
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About PHB108NQ03LT
PDF/DataSheet Download
Datasheet: PHB108NQ03LT
File Size: 275920 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About PHB10N40
PDF/DataSheet Download
Datasheet: PHB10N40
File Size: 71495 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB100N03LT
PDF/DataSheet Download
Datasheet: PHB100N03LT
File Size: 339176 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB108NQ03LT General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:
PHP108NQ03LT in SOT78 (TO-220AB)
PHB108NQ03LT in SOT404 (D2-PAK)
PHD108NQ03LT in SOT428 (D-PAK).
Product availability:
PHP108NQ03LT in SOT78 (TO-220AB)
PHB108NQ03LT in SOT404 (D2-PAK)
PHD108NQ03LT in SOT428 (D-PAK).
PHB108NQ03LT Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 175 | - | 25 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 25 | V |
| ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 75 | A |
| Tmb = 100 ; VGS = 5 V; Figure 2 and 3 | - | 60 | A | ||
| VGS | gate-source voltage | - | ±20 | V | |
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 108 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 180 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
| ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 108 | A | |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 43A; tp = 0.25 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 |
- | 180 | mJ |
PHB108NQ03LT Features
·Logic level compatible
·Very low on-state resistance
·Very low on-state resistance
PHB108NQ03LT Typical Application
·DC to DC converters
·Switched mode power supplies
·Switched mode power supplies
PHB108NQ03LT Connection Diagram
PHB10N40 General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
PHB10N40 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| ID IDM PD D/Tmb VGS EAS IAS Tj, Tstg |
Continuous drain current Pulsed drain current Total dissipation Linear derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range |
Tmb = 25 ; VGS = 10 V Tmb = 100 ; VGS = 10 V Tmb = 25 Tmb = 25 Tmb > 25 VDD 50 V; starting Tj = 25; RGS = 50 ; VGS = 10 V VDD 50 V; starting Tj = 25; RGS = 50 ; VGS = 10 V |
- - - - - - - - - 55 |
10.7 6.7 43 147 1.176 ± 30 520 10 150 |
A A A W W/K V mJ A |
PHB10N40 Connection Diagram
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