PHB160NQ08T, PHB174NQ04LT, PHB176NQ04T Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:06+
PHB160NQ08T, PHB174NQ04LT, PHB176NQ04T Datasheet download

Part Number: PHB160NQ08T
MFG: PHILIPS
Package Cooled: .
D/C: 06+
MFG:PHILIPS Package Cooled:. D/C:06+
PHB160NQ08T, PHB174NQ04LT, PHB176NQ04T Datasheet download

MFG: PHILIPS
Package Cooled: .
D/C: 06+
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Datasheet: PHB160NQ08T
File Size: 91526 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHB100N03LT
File Size: 339176 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHB176NQ04T
File Size: 94203 KB
Manufacturer: PHILIPS [NXP Semiconductors]
Download : Click here to Download
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 175 | - | 75 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 75 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
| Tmb = 100 ; VGS = 10 V; Figure 2 | - | 75 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 300 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
| ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 75A; tp = 0.15 ms; VDD 75 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 |
- | 560 | mJ |
·Motors, lamps, solenoids
·DC-to-DC converters
·Uninterruptable power supplies
·General industrial applications.

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

