PHB2N50, PHB2N60, PHB2N60T Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:06+
PHB2N50, PHB2N60, PHB2N60T Datasheet download
Part Number: PHB2N50
MFG: PHILIPS
Package Cooled: .
D/C: 06+
PHB2N50, PHB2N60, PHB2N60T
- Table of contents:
Info of PHB2N50
Info of PHB2N60
Info of PHB2N60T
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About PHB2N50
PDF/DataSheet Download
Datasheet: PHB2N50
File Size: 61396 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB2N60E
PDF/DataSheet Download
Datasheet: PHB2N60E
File Size: 97019 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB100N03LT
PDF/DataSheet Download
Datasheet: PHB100N03LT
File Size: 339176 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB2N50 General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
PHB2N50 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| ID IDM PD D/Tmb VGS EAS IAS Tj, Tstg |
Continuous drain current Pulsed drain current Total dissipation Linear derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and storage temperature range |
Tmb = 25 ; VGS = 10 V Tmb = 100 ; VGS = 10 V Tmb = 25 Tmb = 25 Tmb > 25 VDD 50 V; starting Tj = 25; RGS = 50 ; VGS = 10 V VDD 50 V; starting Tj = 25; RGS = 50 ; VGS = 10 V |
- - - - - - - - - 55 |
2 1.3 8 50 0.4 ± 30 100 2 150 |
A A A W W/K V mJ A |
PHB2N50 Connection Diagram
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