PHB2N50E, PHB2N60E, PHB30NQ15T Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:TO
PHB2N50E, PHB2N60E, PHB30NQ15T Datasheet download
Part Number: PHB2N50E
MFG: PHILIPS
Package Cooled: .
D/C: TO
PHB2N50E, PHB2N60E, PHB30NQ15T
- Table of contents:
Info of PHB2N50E
Info of PHB2N60E
Info of PHB30NQ15T
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About PHB2N50E
PDF/DataSheet Download
Datasheet: PHB2N50E
File Size: 77073 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB2N60E
PDF/DataSheet Download
Datasheet: PHB2N60E
File Size: 97019 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB30NQ15T
PDF/DataSheet Download
Datasheet: PHB30NQ15T
File Size: 100379 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB2N50E General Description
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
PHB2N50E Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
500 500 ± 30 2 1.3 8 50 150 |
V V V A A A W |
PHB2N50E Features
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHB2N50E Connection Diagram
PHB2N60E General Description
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
PHB2N60E Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
600 600 ± 30 1.9 1.2 7.6 50 150 |
V V V A A A W |
PHB2N60E Features
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHB2N60E Connection Diagram
PHB30NQ15T General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
PHB30NQ15T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
150 150 ± 20 29 20 116 150 175 |
V V V A A A W |
PHB30NQ15T Features
• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
• Very low on-state resistance
• Fast switching
• Low thermal resistance
PHB30NQ15T Connection Diagram
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