PHB34NQ10T, PHB36N06E, PHB37N06LT Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:07+ D/C:TO263/3
PHB34NQ10T, PHB36N06E, PHB37N06LT Datasheet download
Part Number: PHB34NQ10T
MFG: PHILIPS
Package Cooled: 07+
D/C: TO263/3
PHB34NQ10T, PHB36N06E, PHB37N06LT
- Table of contents:
Info of PHB34NQ10T
Info of PHB36N06E
Info of PHB37N06LT
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About PHB34NQ10T
PDF/DataSheet Download
Datasheet: PHB34NQ10T
File Size: 118569 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB36N06E
PDF/DataSheet Download
Datasheet: PHB36N06E
File Size: 56387 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB37N06LT
PDF/DataSheet Download
Datasheet: PHB37N06LT
File Size: 81012 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB34NQ10T General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology.
PHB34NQ10T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
100 100 ± 20 35 25 140 136 175 |
V V V A A A W |
PHB34NQ10T Features
• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
• Low on-state resistance
• Fast switching
• Low thermal resistance
PHB34NQ10T Typical Application
• d.c. to d.c. converters
• switched mode power supplies
• switched mode power supplies
PHB34NQ10T Connection Diagram
PHB36N06E General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
The device is intended for use in automotive and general purpose switching applications.
PHB36N06E Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj |
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature |
- RGS = 20 k - Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 - |
- - - - - - - - 55 |
60 60 30 41 29 164 125 175 175 |
V V V A A A W |
PHB36N06E Connection Diagram
PHB37N06LT General Description
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
PHB37N06LT Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
55 55 ± 13 37 26 148 100 175 |
V V V A A A W |
PHB37N06LT Features
• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHB37N06LT Connection Diagram
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