PHB37N06T, PHB38N02LT, PHB3N40E Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:TO
PHB37N06T, PHB38N02LT, PHB3N40E Datasheet download
Part Number: PHB37N06T
MFG: PHILIPS
Package Cooled: .
D/C: TO
PHB37N06T, PHB38N02LT, PHB3N40E
- Table of contents:
Info of PHB37N06T
Info of PHB38N02LT
Info of PHB3N40E
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About PHB37N06T
PDF/DataSheet Download
Datasheet: PHB37N06T
File Size: 70850 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB38N02LT
PDF/DataSheet Download
Datasheet: PHB38N02LT
File Size: 258668 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB3N40E
PDF/DataSheet Download
Datasheet: PHB3N40E
File Size: 96487 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB37N06T General Description
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHB37N06T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj |
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature |
- RGS = 20 k - Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 - |
- - - - - - - - 55 |
55 55 20 37 26 148 100 175 |
V V V A A A W |
PHB37N06T Connection Diagram
PHB38N02LT General Description
N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:
PHB38N02LT in SOT404 (D2-PAK)
PHD38N02LT in SOT428 (D-PAK).
Product availability:
PHB38N02LT in SOT404 (D2-PAK)
PHD38N02LT in SOT428 (D-PAK).
PHB38N02LT Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 175 | - | 20 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 20 | V |
| VGS | gate-source voltage (DC) | - | 12 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 44.7 | A |
| Tmb = 100 ; VGS = 5 V; Figure 2 | - | 31.6 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 ms; Figure 3 | - | 179 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 57.6 | W |
| Tstg | storage temperature | +175 | |||
| Tj | junction temperature | +175 | |||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tmb = 25 | - | 44.7 | A |
| ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 ms | - | 179 | A |
PHB38N02LT Features
·Low on-state resistance
·2.5 V gate drive.
·2.5 V gate drive.
PHB38N02LT Typical Application
·Linear regulator for DDR memory.
PHB38N02LT Connection Diagram
PHB3N40E General Description
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
PHB3N40E Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 150 Tj = 25 to 150; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
400 400 ± 30 2.5 1.5 10 50 150 |
V V V A A A W |
PHB3N40E Features
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHB3N40E Connection Diagram
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