PHB45N03, PHB45N03LT, PHB45N03LTA Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:263 D/C:N/A
PHB45N03, PHB45N03LT, PHB45N03LTA Datasheet download
Part Number: PHB45N03
MFG: PHILIPS
Package Cooled: 263
D/C: N/A
PHB45N03, PHB45N03LT, PHB45N03LTA
- Table of contents:
Info of PHB45N03
Info of PHB45N03LT
Info of PHB45N03LTA
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About PHB45N03LT
PDF/DataSheet Download
Datasheet: PHB45N03LT
File Size: 62925 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB45N03LT
PDF/DataSheet Download
Datasheet: PHB45N03LT
File Size: 62925 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB45N03LTA
PDF/DataSheet Download
Datasheet: PHB45N03LTA
File Size: 305824 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB45N03LT General Description
N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHB45N03LT is supplied in the SOT404 surface mounting package.
PHB45N03LT Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj |
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature |
- RGS = 20 k - Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 - |
- - - - - - - - 55 |
30 30 15 45 36 180 86 175 |
V V V A A A W |
PHB45N03LT Features
• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Surface mounting package
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Surface mounting package
PHB45N03LT Connection Diagram
PHB45N03LTA General Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.
Product availability:
PHP45N03LTA in SOT78 (TO-220AB)
PHB45N03LTA in SOT404 (D2-PAK)
PHD45N03LTA in SOT428 (D-PAK).
Product availability:
PHP45N03LTA in SOT78 (TO-220AB)
PHB45N03LTA in SOT404 (D2-PAK)
PHD45N03LTA in SOT428 (D-PAK).
PHB45N03LTA Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | Tj =25 to 175 | - | 25 | V |
| VDGR | drain-gate voltage (DC) | Tj =25 to 175 ; RGS = 20 k | - | 25 | V |
| VGS | gate-source voltage | - | ±15 | V | |
| VGSM | gate-source voltage | TP 50 s; pulsed; duty cycle = 25%;Tj 150 | ±20 | ||
| ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 40 | A |
| Tmb = 100 ; VGS = 5 V; Figure 2 | - | 30 | A | ||
| IDM | peak drain current | Tmb = 100 ; pulsed; tp 10 s; Figure 3 | - | 160 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 65 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tmb = 25 | - | 40 | A |
| ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - | 160 | A |
| Avalanche ruggedness | |||||
| EAS | non-repetitive avalanche energy | unclamped inductive load; ID =40 A; tp = 0.1 ms; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 |
- | 60 | mJ |
PHB45N03LTA Features
·Low on-state resistance
·Fast switching.
·Fast switching.
PHB45N03LTA Typical Application
·Computer motherboard high frequency DC to DC converters.
PHB45N03LTA Connection Diagram
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