PHB4ND40E, PHB506, PHB50N03 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:9800 D/C:TO
PHB4ND40E, PHB506, PHB50N03 Datasheet download
Part Number: PHB4ND40E
MFG: PHILIPS
Package Cooled: 9800
D/C: TO
PHB4ND40E, PHB506, PHB50N03
- Table of contents:
Info of PHB4ND40E
Info of PHB506
Info of PHB50N03
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About PHB4ND40E
PDF/DataSheet Download
Datasheet: PHB4ND40E
File Size: 66708 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB100N03LT
PDF/DataSheet Download
Datasheet: PHB100N03LT
File Size: 339176 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB50N03
PDF/DataSheet Download
Datasheet: PHB50N03
File Size: 111371 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB4ND40E General Description
N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge ansd full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor control circuits.
PHB4ND40E Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS | Drain-source voltage | Tj =25 to 175 | - | 400 | V |
| VDGR | Drain-gate voltage | Tj =25 to 175 ; RGS = 20 k | - | 400 | V |
| VGS | Gate-source voltage | -- | ±30 | V | |
| ID | Continuous drain current | Tmb = 25 ;VGS = 10 V | 4.4 | A | |
| Tmb = 100 ;VGS = 10 V | - | 2.7 | A | ||
| IDM | Pulsed drain current | Tmb = 25 | - | 18 | A |
| PD | Total power dissipation | Tmb = 25 | - | 83 | W |
| Tj, Tstg | Operating junction and storage temperature |
-55 | 150 |
PHB4ND40E Features
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast reverse recovery diode
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast reverse recovery diode
PHB4ND40E Connection Diagram
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