PHB50N06LT, PHB50N06T, PHB55N03 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:. D/C:TO
PHB50N06LT, PHB50N06T, PHB55N03 Datasheet download
Part Number: PHB50N06LT
MFG: PHILIPS
Package Cooled: .
D/C: TO
PHB50N06LT, PHB50N06T, PHB55N03
- Table of contents:
Info of PHB50N06LT
Info of PHB50N06T
Info of PHB55N03
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About PHB50N06LT
PDF/DataSheet Download
Datasheet: PHB50N06LT
File Size: 82724 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB50N06T
PDF/DataSheet Download
Datasheet: PHB50N06T
File Size: 70855 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB55N03
PDF/DataSheet Download
Datasheet: PHB55N03
File Size: 109971 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB50N06LT General Description
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP50N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB50N06LT is supplied in the SOT404 surface mounting package.
The PHD50N06LT is supplied in the SOT428 surface mounting package.
PHB50N06LT Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS | Drain-source voltage | Tj =25 to 175 | - | 55 | V |
| VDGR | Drain-gate voltage | Tj =25 to 175 ; RGS = 20 k | - | 55 | V |
| VGS | Gate-source voltage | -- | ±13 | V | |
| ID | Continuous drain current | Tmb = 25 | 50 | A | |
| Tmb = 100 | - | 35 | A | ||
| IDM | Pulsed drain current | Tmb = 25 | - | 200 | A |
| PD | Total power dissipation | Tmb = 25 | - | 125 | W |
| Tj, Tstg | Operating junction and storage temperature |
-55 | 175 |
PHB50N06LT Features
• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
PHB50N06LT Connection Diagram
PHB50N06T General Description
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.
PHB50N06T Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj |
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature |
- RGS = 20 k - Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 - |
- - - - - - - - 55 |
55 55 20 50 35 200 125 175 |
V V V A A A W |
PHB50N06T Connection Diagram
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