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PHB60N06, PHB60N06LT, PHB60N06T

Table of contents:
Info of PHB60N06
Info of PHB60N06LT
Info of PHB60N06T

PHB60N06, PHB60N06LT, PHB60N06T Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:SOT263 D/C:2006

PHB60N06, PHB60N06LT, PHB60N06T Datasheet download

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Part Number: PHB60N06

MFG: PHILIPS

Package Cooled: SOT263

D/C: 2006

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PHB60N06LT General Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

The PHP60N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHB60N06LT is supplied in the SOT404 surface mounting package.

PHB60N06LT Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DSS	Drain-source voltage	T_j =25 to 175	-	55	V
V_DGR	Drain-gate voltage	T_j =25 to 175 ; R_GS = 20 k	-	55	V
V_GS	Gate-source voltage		--	±13	V
I_D	Continuous drain current	T_mb= 25		58	A
I_D	Continuous drain current	T_mb= 100	-	40	A
I_DM	Pulsed drain current	T_mb= 25	-	232	A
P_D	Total power dissipation	T_mb= 25	-	150	W
T_j, T_stg	Operating junction and storage temperature		-55	175

PHB60N06LT Features

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance

PHB60N06LT Connection Diagram

PHB60N06T General Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using 'trench' technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications.

PHB60N06T Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS V_DGR±V_GSI_DI_DI_DMP_totT_stg, T_j	Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature	- R_GS = 20 k - T_mb = 25 T_mb = 100 T_mb= 25 T_mb= 25 -	- - - - - - - - 55	55 55 20 58 40 232 150 175	V V V A A A W

PHB60N06T Connection Diagram

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