PHB95N03, PHB95N03L, PHB95N03LT Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:263 D/C:TO263
PHB95N03, PHB95N03L, PHB95N03LT Datasheet download
Part Number: PHB95N03
MFG: PHILIPS
Package Cooled: 263
D/C: TO263
PHB95N03, PHB95N03L, PHB95N03LT
- Table of contents:
Info of PHB95N03
Info of PHB95N03L
Info of PHB95N03LT
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About PHB95N03LT
PDF/DataSheet Download
Datasheet: PHB95N03LT
File Size: 312000 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB95N03LT
PDF/DataSheet Download
Datasheet: PHB95N03LT
File Size: 312000 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHB95N03LT
PDF/DataSheet Download
Datasheet: PHB95N03LT
File Size: 312000 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHB95N03LT General Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.
Product availability:
PHP95N03LT in SOT78 (TO-220AB)
PHB95N03LT in SOT404 (D2-PAK)
PHE95N03LT in SOT226 (I2-PAK).
Product availability:
PHP95N03LT in SOT78 (TO-220AB)
PHB95N03LT in SOT404 (D2-PAK)
PHE95N03LT in SOT226 (I2-PAK).
PHB95N03LT Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | Tj =25 to 175 | - | 25 | V |
| VDGR | drain-gate voltage (DC) | Tj =25 to 175 ; RGS = 20 k | - | 25 | V |
| VGS | gate-source voltage(DC) | - | ±15 | V | |
| VGSM | gate-source voltage | TP 50 s; pulsed; duty cycle = 25%;Tj 150 | ±20 | ||
| ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 75 | A |
| Tmb = 100 ; VGS = 5 V; Figure 2 | - | 61 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 125 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | operating junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tmb = 25 | - | 75 | A |
| ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - | 240 | A |
| Avalanche ruggedness | |||||
| EAS | non-repetitive avalanche energy | unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 |
- | 120 | mJ |
| IAS | non-repetitive avalanche current | unclamped inductive load; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 |
- | 75 | A |
PHB95N03LT Features
·Low on-state resistance
·Fast switching.
·Fast switching.
PHB95N03LT Typical Application
·High frequency computer motherboard DC to DC converters
PHB95N03LT Connection Diagram
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