PHN103T, PHN110, PHN125 Selling Leads, Datasheet
MFG:NXP Package Cooled:0217+ D/C:SOP-8
PHN103T, PHN110, PHN125 Datasheet download
Part Number: PHN103T
MFG: NXP
Package Cooled: 0217+
D/C: SOP-8
PHN103T, PHN110, PHN125
- Table of contents:
Info of PHN103T
Info of PHN110
Info of PHN125
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About PHN103T
PDF/DataSheet Download
Datasheet: PHN103T
File Size: 356031 KB
Manufacturer: Philips
Download : Click here to Download
About PHN110
PDF/DataSheet Download
Datasheet: PHN110
File Size: 81374 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHN1011
PDF/DataSheet Download
Datasheet: PHN1011
File Size: 118384 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHN103T General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability:PHN103T in SOT96-1 (SO8).
PHN103T Maximum Ratings
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
|
VDS |
drain-source voltage (DC) | Tj = 25 to 150 °C |
- |
30 |
V |
|
VDGR |
drain-gate voltage (DC) | Tj = 25 to 150 °C; RGS = 20 k |
- |
30 |
V |
|
VGS |
gate-source voltage (DC) |
- |
±20 |
V | |
|
ID |
drain current (DC) | Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 |
- |
8.6 |
A |
| Tsp = 100 °C; VGS = 4.5 V; Figure 2 |
- |
5.4 |
A | ||
|
IDM |
peak drain current | Tsp = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
34 |
A |
|
Ptot |
total power dissipation | Tsp = 25 °C; Figure 1 |
- |
6.25 |
W |
|
Tstg |
storage temperature |
-65 |
+150 |
°C | |
|
Tj |
junction temperature |
-65 |
+150 |
°C | |
| Source-drain diode | |||||
|
IS |
source (diode forward) current (DC) | Tsp = 25 °C |
- |
7 |
A |
|
ISM |
peak source (diode forward) current | Tsp = 25 °C; tp 10 s |
- |
34 |
A |
PHN103T Features
· TrenchMOS™ technology
· Fast switching
· Low on-state resistance
· Logic level compatible
· Surface mount package
· Fast switching
· Low on-state resistance
· Logic level compatible
· Surface mount package
PHN103T Typical Application
· Motor and actuator driver
· Battery management
· High speed, low resistance switch.
· Battery management
· High speed, low resistance switch.
PHN103T Connection Diagram
PHN110 General Description
N-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package.
PHN110 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage (DC) | - | 30 | V | |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Ts = 80 ; note 1 | - | 4 | A |
| IDM | peak drain current | note 2 | - | 16 | A |
| Ptot | total power dissipation | Ts = 80 ; | - | 2.8 | W |
| Tamb = 25 ; note 3 | - | 2.4 | W | ||
| Tamb = 25 ; note 4 | - | 1.1 | W | ||
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | -65 | +150 | ||
| Source-drain diode | |||||
| IS | source current (DC) | Ts = 80 °C | - | 3.5 | A |
| ISM | peak source current | note 2 | - | 14 | A |
PHN110 Features
· High-speed switching
· No secondary breakdown
· Very low on-resistance.
· No secondary breakdown
· Very low on-resistance.
PHN110 Typical Application
· Motor and actuator driver
· Power management
· Synchronized rectification.
· Power management
· Synchronized rectification.
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