PHN210, PHN210118, PHN210T Selling Leads, Datasheet
MFG:NXP Package Cooled:SOP8 D/C:00+
PHN210, PHN210118, PHN210T Datasheet download
Part Number: PHN210
MFG: NXP
Package Cooled: SOP8
D/C: 00+
PHN210, PHN210118, PHN210T
- Table of contents:
Info of PHN210
Info of PHN210118
Info of PHN210T
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About PHN210
PDF/DataSheet Download
Datasheet: PHN210
File Size: 111726 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHN1011
PDF/DataSheet Download
Datasheet: PHN1011
File Size: 118384 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHN210T
PDF/DataSheet Download
Datasheet: PHN210T
File Size: 90403 KB
Manufacturer: Philips
Download : Click here to Download
PHN210 General Description
Dual N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology.
PHN210 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | Repetitive peak drain-source voltage | Tj = 25 to 150 | - | 30 | V |
| VDS | Continuous drain-source voltage | - | 30 | V | |
| VDGR | Drain-gate voltage | RGS = 20 k | - | 30 | V |
| VGS | Gate-source voltage | - | ± 20 | V | |
| ID | Drain current per MOSFET1 | Ta = 25 Ta = 70 | - | 3.4 2.8 | A A |
| ID | Drain current per MOSFET (both MOSFETs conducting)1 | Ta = 25 Ta = 70 | - | 2.4 1.9 | A A |
| IDM | Drain current per MOSFET (pulse peak value) | Ta = 25 | - | 14 | A |
| Ptot | Total power dissipation (either or both MOSFETs conducting)1 | Ta = 25 Ta = 70 | - | 2 1.3 | W W |
| Tj, Tstg | Storage & operating temperature | -65 | 150 |
PHN210 Features
• Dual device
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package
PHN210 Typical Application
• Motor and relay drivers
• d.c. to d.c. converters
• Logic level translator
• d.c. to d.c. converters
• Logic level translator
PHN210T General Description
Dual N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench'technology.
PHN210T Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MIN. |
UNIT |
|
VDS |
Repetitive peak drain-source voltage |
Tj = 25 °C to 150°C |
- |
30 |
V |
|
VDS |
Continuous drain-source voltage |
- |
30 |
V | |
|
VDGR |
Drain-gate voltage |
RGS = 20 k |
- |
30 |
V |
|
VGS |
Gate-source voltage |
- |
±20 |
V | |
|
ID
|
Drain current per MOSFET1 |
Ta = 25 °C |
- |
3.4 |
A |
|
Ta = 70 °C |
- |
2.8 |
A | ||
|
ID
|
Drain current per MOSFET (both MOSFETs conducting)1 |
Ta = 25 °C |
- |
2.4 |
A |
|
Ta = 70 °C |
- |
1.9 |
A | ||
|
IDM
|
Drain current per MOSFET (pulse peak value) |
Ta = 25 °C |
- |
14 |
A |
|
- |
2 |
W | |||
|
Ptot |
Total power dissipation (either or both MOSFETs conducting)1 |
Ta = 25 °C |
- |
1.3 |
W |
|
Tstg,Tj |
Storage & operating temperature |
Ta = 70 °C |
-65 |
150 |
°C |
PHN210T Features
• Dual device
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package
PHN210T Typical Application
• Motor and relay drivers
• d.c. to d.c. converters
• Logic level translator
• d.c. to d.c. converters
• Logic level translator
PHN210T Connection Diagram
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