PHN70308, PHN708, PHONE PLUG(750) Selling Leads, Datasheet
MFG:PHI Package Cooled:SSOP28M D/C:2007+
PHN70308, PHN708, PHONE PLUG(750) Datasheet download
Part Number: PHN70308
MFG: PHI
Package Cooled: SSOP28M
D/C: 2007+
PHN70308, PHN708, PHONE PLUG(750)
- Table of contents:
Info of PHN70308
Info of PHN708
Info of PHONE PLUG(750)
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About PHN70308
PDF/DataSheet Download
Datasheet: PHN70308
File Size: 176169 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHN708
PDF/DataSheet Download
Datasheet: PHN708
File Size: 94988 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHOI04-85
PDF/DataSheet Download
Datasheet: PHOI04-85
File Size: 91918 KB
Manufacturer: MACOM [Tyco Electronics]
Download : Click here to Download
PHN70308 General Description
This product is used to drive high performance, three phase brushless d.c. motors in computer disk drives.
The PHN70308 contains seven, n-channel enhancement mode trenchMOS transistors in a surface mounting plastic package. Six of the transistors can be configured as a three phase bridge to drive the spindle of a disk drive motor. The remaining transistor delivers power to the three phase bridge during normal operation. In the event of a power failure occurring whilst the motor is still spinning, this transistor isolates the computer power supply from the back emf generated by the motor.
The PHN70308 is supplied in the surface mounting SOT341-1 (SSOP28) package.
PHN70308 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDSS | Drain-source voltage | Tj = 25 °C to 150°C | - | 25 | V |
| VDGR | Drain-gate voltage | RGS = 20 k | - | 25 | V |
| VGS | Gate-source voltage | - | ± 20 | V | |
| ID | Peak drain current per device (continuous operation) | Tsp = 50 °C spindle FETs; = 33.3% Isolation FET (dc) | - | 5 5 | A A |
| IDM | Peak current per device (pulse peak value) | spindle FETs isolation FET | - | 20 20 | A A |
| Ptot | Power dissipation per device2 | Tsp = 50 °C spindle FETs; = 33.3% isolation FET (dc) | 1.13 1.275 | W W | |
| Ptot | Total power dissipation in normal operation2 | Tsp = 50 °C spindle FETs; = 33.3% isolation FET (dc) | - | 8 | W |
| Tstg,Tj | Storage & operating temperature | -55 | 150 | °C |
PHN70308 Features
• 30 mW isolation transistor
• 80 mW spindle transistors
• TrenchMOS technology
• Logic level compatible
• Surface mount package
• 80 mW spindle transistors
• TrenchMOS technology
• Logic level compatible
• Surface mount package
PHN70308 Typical Application
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PHN708 General Description
Seven enhancement mode MOS transistors in a 24-pin plastic SOT340-1 (SSOP24) package. Six of the transistors are in three half-bridge configurations.
PHN708 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| Per FET | |||||
| VDS | drain-source voltage (DC) | - | 30 | V | |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Ts = 80 °C; note 1 | - | 3.1 | A |
| IDM | peak drain current | note 2 | - | 12.4 | A |
| Ptot | total power dissipation | Ts = 80 ; note 3 | - | 1.3 | W |
| Ts = 80 ; note 4 | - | 1.13 | W | ||
| Ts = 80 ; note 5 | - | 0.92 | W | ||
| Ts = 80 ; note 6 | - | 0.77 | W | ||
| Tstg | storage temperature | -55 | +150 | ||
| Tj | operating junction temperature | -55 | 150 | ||
| Source-drain diode | |||||
| IS | source current (DC) | Ts = 80 | - | 1.3 | A |
| ISM | peak source current | note 2 | - | 5.2 | A |
PHN708 Features
· High-speed switching
· No secondary breakdown
· Very low on-state resistance.
· No secondary breakdown
· Very low on-state resistance.
PHN708 Typical Application
· High-speed switching
· No secondary breakdown
· Very low on-state resistance.
· No secondary breakdown
· Very low on-state resistance.
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