PHN201, PHN203, PHN205 Selling Leads, Datasheet
MFG:NXP Package Cooled:SOP8 D/C:08+
PHN201, PHN203, PHN205 Datasheet download
Part Number: PHN201
MFG: NXP
Package Cooled: SOP8
D/C: 08+
PHN201, PHN203, PHN205
- Table of contents:
Info of PHN201
Info of PHN203
Info of PHN205
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About PHN1011
PDF/DataSheet Download
Datasheet: PHN1011
File Size: 118384 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHN203
PDF/DataSheet Download
Datasheet: PHN203
File Size: 100970 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHN205
PDF/DataSheet Download
Datasheet: PHN205
File Size: 90430 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHN203 General Description
N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHN203 is supplied in the SOT96-1 (SO8) surface mounting package.
PHN203 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | Repetitive peak drain-source voltage | Tj = 25 to 150 | - | 25 | V |
| VDS | Continuous drain-source voltage | - | 25 | V | |
| VDGR | Drain-gate voltage | RGS = 20 kW | - | 25 | V |
| VGS | Gate-source voltage | - | ± 20 | V | |
| ID | Drain current per MOSFET1 |
Ta = 25 Ta = 70 |
- | 6.3 5 | A A |
| ID | Drain current per MOSFET (both MOSFETs conducting)1 | Ta = 25 Ta = 70 | - | 4.4 3.5 | A A |
| IDM | Drain current per MOSFET (pulse peak value) | Ta = 25 | - | 25 | A |
| Ptot | Total power dissipation (either or both MOSFETs conducting)1 | Ta = 25 Ta = 70 | - | 2 1.3 | w w |
| Tstg, Tj | Storage & operating temperature | -55 | 150 |
PHN203 Features
• Dual device
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package
PHN203 Typical Application
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PHN205 General Description
Two N-channel enhancement mode MOS transistors in an 8-pin plastic SOT96-1 (SO8) package.
PHN205 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| Per FET | |||||
| VDS | drain-source voltage (DC) | - | 30 | V | |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Ts = 80 ; note 1 | - | 6.4 | A |
| IDM | peak drain current | note 2 | - | 25 | A |
| Ptot | total power dissipation | Ts = 80 ; note 3 | - | 3.5 | W |
| Tamb = 25 ; note 4 | - | 2.6 | W | ||
| Tamb = 25 ; note 5 | - | 1.1 | W | ||
| Tamb = 25 ; note 6 | - | 1.5 | W | ||
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | -65 | 150 | ||
| Source-drain diode | |||||
| IS | source current (DC) | Ts = 80 | - | 3.5 | A |
| ISM | peak source current | note 2 | - | 14 | A |
PHN205 Features
· High-speed switching
· No secondary breakdown
· Very low on-state resistance.
· No secondary breakdown
· Very low on-state resistance.
PHN205 Typical Application
· Motor and actuator driver
· Power management
· Synchronized rectification.
· Power management
· Synchronized rectification.
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