RFG40N10LE, RFG45N06, RFG50N05 Selling Leads, Datasheet
MFG:07+ Package Cooled:8000 D/C:TO-
RFG40N10LE, RFG45N06, RFG50N05 Datasheet download
Part Number: RFG40N10LE
MFG: 07+
Package Cooled: 8000
D/C: TO-
RFG40N10LE, RFG45N06, RFG50N05
- Table of contents:
Info of RFG40N10LE
Info of RFG45N06
Info of RFG50N05
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About RFG40N10LE
PDF/DataSheet Download
Datasheet: RFG40N10LE
File Size: 422980 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFG45N06
PDF/DataSheet Download
Datasheet: RFG45N06
File Size: 75629 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFG50N05
PDF/DataSheet Download
Datasheet: RFG50N05
File Size: 48483 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFG40N10LE General Description
These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49163.
RFG40N10LE Maximum Ratings
| UNITS | |||
| Drain to Source Breakdown Voltage (Note 1) | VDSS | 100 | V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) . | VDGR | 100 | V |
| Gate to Source Voltage (Note 4) | VGS | ±10 | V |
| Continuous Drain Current | ID | 40 | A |
| Pulsed Drain Current (Note 3) | IDM | Refer to Peak Current Curve | |
| Single Pulse Avalanche Energy Rating | EAS | Refer to UIS Curve | |
| Power Dissipation (Figure 1)c | PD | 150 | W |
| Derate Above 25 | 1.00 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RFG40N10LE Features
• 40A, 100V
• r DS(ON) = 0.040
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175 Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• r DS(ON) = 0.040
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175 Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFG45N06 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA49028.
RFG45N06 Maximum Ratings
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | 60 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | 60 | V |
| Continuous Drain Current | ID | 45 | A |
| Pulsed Drain Current (Note 3) | IDM | Refer to Peak Current Curve | |
| Gate to Source Voltage | VGS | ±20 | V |
| Pulse Avalanche Rating | EAS | Refer to UIS Curve | |
| Power Dissipation | PD | 131 | W |
| Linear Derating Factor | 0.877 | W/ | |
| Operating and Storage Temperature | TJ , TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
T L Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RFG45N06 Features
• 45A, 60V
• rDS(ON) = 0.028W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.028W
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFG50N05 General Description
These are N-Channel power MOSFET'S manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. Formerly developmental type TA09772
RFG50N05 Maximum Ratings
| RFG50N05, RFP50N05 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 50 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 50 | V |
| Continuous Drain Current ID | 50 | A |
| Pulsed Drain Current (Note 3) IDM | 120 | A |
| Gate to Source Voltage VGS | ±20 | V |
| Power Dissipation PD | 132 | W |
| Derate Above 25oC | 0.88 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
RFG50N05 Features
• 50A, 50V
• rDS(ON) = 0.022W
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• rDS(ON) = 0.022W
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
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