MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:8000 D/C:03+
RFG60P03, RFG60P05E, RFG60P06 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 8000
D/C: 03+
Description: MOSFET P-CH 50V 60A TO-247
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PDF/DataSheet Download
Datasheet: RFG60P03
File Size: 91089 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFG60P05E
File Size: 96364 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RFG60P06E
File Size: 66933 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49045.
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | -30 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | -30 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (Figure 2) | ID | 60 | A |
| Pulsed Drain Current (Note 3) | IDM | Refer to Peak Current Curve | |
| Single Pulse Avalanche Rating | EAS | Figure 6 | |
| Maximum Power Dissipation (Figure 1) | PD | 176 | W |
| Derate Above 25 | 1.17 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
TL Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
| Technical/Catalog Information | RFG60P05E |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25° C | 60A |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 60A, 10V |
| Input Capacitance (Ciss) @ Vds | 7200pF @ 25V |
| Power - Max | 215W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 450nC @ 20V |
| Package / Case | TO-247 |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | RFG60P05E RFG60P05E |
This is a P-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. This type can be operated directly from integrated circuits.
Formerly developmental type TA09835.
| RFG60P05E | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | -50 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | -50 | V |
| Continuous Drain Current ID | 60 | A |
| Pulsed Drain Current (Note 3) IDM | 200 | A |
| Gate to Source Voltage VGS | ±20 | V |
| Power Dissipation PD | 215 | W |
| Derate Above 25oC | 1.43 | A |
| Pulsed Avalanche Rating UIS | Refer to UIS SOA | |
| Operating and Storage Temperature .TJ, TSTG | -55 to 75 | o C |
| Maximum Temperature for Soldering | ||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | o C |
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