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RFG75N05E, RFGC2-B7, RFG-C2C1

Table of contents:
Info of RFG75N05E
Info of RFGC2-B7
Info of RFG-C2C1

RFG75N05E, RFGC2-B7, RFG-C2C1 Selling Leads, Datasheet

MFG:06+ Package Cooled:8000 D/C:03+

RFG75N05E, RFGC2-B7, RFG-C2C1 Datasheet download

Five Points

Part Number: RFG75N05E

MFG: 06+

Package Cooled: 8000

D/C: 03+

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RFG75N05E General Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA09821.

RFG75N05E Maximum Ratings

	RFG75N05E	UNITS
Drain to Source Voltage (Note 1) V_DSS	50	V
Drain to Gate Voltage (RGS = 1MW) (Note 1)V_DGR	50	V
Continuous Drain Current ID	75	A
Pulsed Drain Current (Note 3) I_DM	200	A
Gate to Source Voltage V_GS	±20	V
Maximum Power Dissipation PD	240	W
Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID	1.6	A
Pulsed Avalanche Rating UIS	Refer to UIS SOA
Operating and Storage Temperature .TJ, T^STG	-55 to 150	^o C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. TL	300	^oC
Package Body for 10s, See Techbrief 334 Tpkg	260	^oC

RFG75N05E Features

• 75A, 50V
• rDS(ON) = 0.008W
• Electrostatic Discharge Rated
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Temperature Compensated PSPICE® Model Provided

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