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RFM10N15, RFM10N45, RFM10N50

RFM10N15, RFM10N45, RFM10N50 Selling Leads, Datasheet

MFG:MOT  Package Cooled:01+  D/C:01+

RFM10N15, RFM10N45, RFM10N50 Picture

RFM10N15, RFM10N45, RFM10N50 Datasheet download

Five Points

Part Number: RFM10N15

 

MFG: MOT

Package Cooled: 01+

D/C: 01+

 

 

 
 
 
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RFM10N15 Suppliers

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  • RFM PCB

  • D/C: 01+& Note: IN OWN HK STOCK  Adddate: 2024-04-28
  • Inquire Now
  • Able Electronics Comapny   China
    Contact: Mr.LewisLiu   MSN:zhengang2@hotmail.com
    Tel: 86--10-82637618
    Fax: 86--10-82637005
    (0)

About RFM10N15

PDF/DataSheet Download

Datasheet: RFM10N15

File Size: 225812 KB

Manufacturer: GESS [GE Solid State]

Download : Click here to Download

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RFM10N45 Suppliers

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  • RFM PCB

  • D/C: 01+& Note: IN OWN HK STOCK  Adddate: 2024-04-28
  • Inquire Now
  • Able Electronics Comapny   China
    Contact: Mr.LewisLiu   MSN:zhengang2@hotmail.com
    Tel: 86--10-82637618
    Fax: 86--10-82637005
    (0)

About RFM10N45

PDF/DataSheet Download

Datasheet: RFM10N45

File Size: 32072 KB

Manufacturer: INTERSIL [Intersil Corporation]

Download : Click here to Download

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RFM10N50 Suppliers

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  • RFM PCB

  • D/C: 01+& Note: IN OWN HK STOCK  Adddate: 2024-04-28
  • Inquire Now
  • Able Electronics Comapny   China
    Contact: Mr.LewisLiu   MSN:zhengang2@hotmail.com
    Tel: 86--10-82637618
    Fax: 86--10-82637005
    (0)

About RFM10N50

PDF/DataSheet Download

Datasheet: RFM10N50

File Size: 32072 KB

Manufacturer: INTERSIL [Intersil Corporation]

Download : Click here to Download

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RFM10N45 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

RFM10N45 Maximum Ratings

  RFM10N45 RFM10N50 UNITS
Drain to Source Voltage (Note 1) VDSS 450 500 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 450 500 V
RMS Continuous ID 10 10 A
Pulsed Drain Current (Note 3) IDM 20 20 V
Maximum Power Dissipation PD ±20 ±20 V
Maximum Power Dissipation PD 150 150 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 1.2 1.2 W/oC
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C

RFM10N45 Features

• 10A, 450V and 500V
• rDS(ON) = 0.600W

RFM10N50 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

RFM10N50 Maximum Ratings

  RFM10N45 RFM10N50 UNITS
Drain to Source Voltage (Note 1) VDSS 450 500 V
Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR 450 500 V
RMS Continuous ID 10 10 A
Pulsed Drain Current (Note 3) IDM 20 20 V
Maximum Power Dissipation PD ±20 ±20 V
Maximum Power Dissipation PD 150 150 W
Operating and Storage Temperature .TJ, TSTG -55 to 150 -55 to 150 o C
Linear Derating Factor 1.2 1.2 W/oC
Leads at 0.063in (1.6mm) from Case for 10s. TL 260 260 o C

RFM10N50 Features

• 10A, 450V and 500V
• rDS(ON) = 0.600W

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