RFM12N18, RFM12N20, RFM12N35 Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:TO-3 D/C:TO-3
RFM12N18, RFM12N20, RFM12N35 Datasheet download
Part Number: RFM12N18
MFG: MOT/ON
Package Cooled: TO-3
D/C: TO-3
RFM12N18, RFM12N20, RFM12N35
- Table of contents:
Info of RFM12N18
Info of RFM12N20
Info of RFM12N35
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About RFM12N18
PDF/DataSheet Download
Datasheet: RFM12N18
File Size: 36500 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFM12N20
PDF/DataSheet Download
Datasheet: RFM12N20
File Size: 36500 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFM12N35
PDF/DataSheet Download
Datasheet: RFM12N35
File Size: 32125 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFM12N18 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFM12N18 Maximum Ratings
| RFM12N18 | RFM12N20 | RFP18N18 | RFM12N20 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 180 | 200 | 180 | 200 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 180 | 200 | 180 | 200 | V |
| Continuous Drain Current ID | 12 | 12 | 12 | 12 | A |
| Pulsed Drain Current (Note 3) IDM | 30 | 30 | 30 | 30 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 75 | 75 | 60 | 60 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
RFM12N18 Features
• 12A, 180V and 200V
• rDS(ON) = 0.250W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.250W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFM12N20 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFM12N20 Maximum Ratings
| RFM12N18 | RFM12N20 | RFP18N18 | RFM12N20 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 180 | 200 | 180 | 200 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 180 | 200 | 180 | 200 | V |
| Continuous Drain Current ID | 12 | 12 | 12 | 12 | A |
| Pulsed Drain Current (Note 3) IDM | 30 | 30 | 30 | 30 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 75 | 75 | 60 | 60 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
RFM12N20 Features
• 12A, 180V and 200V
• rDS(ON) = 0.250W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.250W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFM12N35 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFM12N35 Maximum Ratings
| RFM12N35 | RFP6N40 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 350 | 400 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 350 | 400 | V |
| RMS Continuous ID | 12 | 12 | A |
| Pulsed Drain Current (Note 3) IDM | 24 | 24 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 150 | 150 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 1.2 | 1.2 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
RFM12N35 Features
• 12A, 350V and 400V
• rDS(ON) = 0.500W
• rDS(ON) = 0.500W
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