RFM15N15, RFM18N08, RFM18N10 Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:TO-3 D/C:07+
RFM15N15, RFM18N08, RFM18N10 Datasheet download
Part Number: RFM15N15
MFG: MOT/ON
Package Cooled: TO-3
D/C: 07+
RFM15N15, RFM18N08, RFM18N10
- Table of contents:
Info of RFM15N15
Info of RFM18N08
Info of RFM18N10
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About RFM15N15
PDF/DataSheet Download
Datasheet: RFM15N15
File Size: 248644 KB
Manufacturer: GESS [GE Solid State]
Download : Click here to Download
About RFM18N08
PDF/DataSheet Download
Datasheet: RFM18N08
File Size: 39288 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFM18N10
PDF/DataSheet Download
Datasheet: RFM18N10
File Size: 39288 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFM18N08 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFM18N08 Maximum Ratings
| RFM18N08 | RFM18N10 | RFP18N08 | RFP18N10 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 80 | 100 | 80 | 100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 80 | 100 | 80 | 100 | V |
| Continuous Drain Current ID | 18 | 18 | 18 | 18 | A |
| Pulsed Drain Current (Note 3) IDM | 45 | 45 | 45 | 45 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 100 | 100 | 100 | 100 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
RFM18N08 Features
• 18A, 80V and 100V
• rDS(ON) = 0.100W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.100W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
RFM18N10 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFM18N10 Maximum Ratings
| RFM18N08 | RFM18N10 | RFP18N08 | RFP18N10 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 80 | 100 | 80 | 100 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 80 | 100 | 80 | 100 | V |
| Continuous Drain Current ID | 18 | 18 | 18 | 18 | A |
| Pulsed Drain Current (Note 3) IDM | 45 | 45 | 45 | 45 | A |
| Gate to Source Voltage VGS | ±20 | ±20 | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 100 | 100 | 100 | 100 | W |
| Continuous (TC= 100oC, VGS = 10V) (Figure 2) ID | 0.8 | 0.8 | 0.8 | 0.8 | W/oC |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | -55 to 150 | -55 to 150 | oC |
| Maximum Temperature for Soldering | |||||
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 300 | 300 | 300 | 300 | o C |
| Package Body for 10s, See Techbrief 334 Tpkg | 260 | 260 | 260 | 260 | o C |
RFM18N10 Features
• 18A, 80V and 100V
• rDS(ON) = 0.100W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(ON) = 0.100W
• Related Literature- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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