RFM12N40, RFM12P08, RFM12P10 Selling Leads, Datasheet
MFG:MOT/ON Package Cooled:TO-3 D/C:07+
RFM12N40, RFM12P08, RFM12P10 Datasheet download
Part Number: RFM12N40
MFG: MOT/ON
Package Cooled: TO-3
D/C: 07+
RFM12N40, RFM12P08, RFM12P10
- Table of contents:
Info of RFM12N40
Info of RFM12P08
Info of RFM12P10
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About RFM12N40
PDF/DataSheet Download
Datasheet: RFM12N40
File Size: 32125 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFM12P08
PDF/DataSheet Download
Datasheet: RFM12P08
File Size: 693077 KB
Manufacturer: GE [General Semiconductor]
Download : Click here to Download
About RFM12P10
PDF/DataSheet Download
Datasheet: RFM12P10
File Size: 40936 KB
Manufacturer:
Download : Click here to Download
RFM12N40 General Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
RFM12N40 Maximum Ratings
| RFM12N35 | RFP6N40 | UNITS | |
| Drain to Source Voltage (Note 1) VDSS | 350 | 400 | V |
| Drain to Gate Voltage (RGS = 1MW) (Note 1)VDGR | 350 | 400 | V |
| RMS Continuous ID | 12 | 12 | A |
| Pulsed Drain Current (Note 3) IDM | 24 | 24 | V |
| Maximum Power Dissipation PD | ±20 | ±20 | V |
| Maximum Power Dissipation PD | 150 | 150 | W |
| Operating and Storage Temperature .TJ, TSTG | -55 to 150 | -55 to 150 | o C |
| Linear Derating Factor | 1.2 | 1.2 | W/oC |
| Leads at 0.063in (1.6mm) from Case for 10s. TL | 260 | 260 | o C |
RFM12N40 Features
• 12A, 350V and 400V
• rDS(ON) = 0.500W
• rDS(ON) = 0.500W
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