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Our AM8T-I series is a family of cost effective 8W single and dual output DC-DC converters. These converters are DIP24 compatible metal case with dimensions of 31.8x20.3x10.2mm. The high performance features of our AM8T-...
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AMD's Am85C30 is an enhanced pin-compatible version of the popular Am8530H Serial Communications Controller. The Enhanced Serial Communications Controller (ESCC) is a high-speed, low-power, multiprotocol communications p...
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The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.AM83135-050 is characterized at 10 msec pulsewidth and 10% duty cycle, but...
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The AM83135-040 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.AM83135-040 is characterized at 10msec pulse width and 10% duty cycle, but...
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The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.AM83135-030 is characterized at 100msec pulse width and 10% duty cycle, bu...
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The AM83135-015 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.This device is characterized at 100msec pulse width and 10% duty cycle, b...
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The AM83135-005 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications.This device is capable of operation over a wide range of pulse widths. duty cycles...
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The AM83135-001 device is a medium power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed driver applications.This device is capable of operation over a wide range of pulse widths, duty cycles...
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The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.The device is capable of operation over a wde range of pulse widths, duty ...
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The AM82731-025 device is a high power silicon bipolarNPNtransistor specifically designed forS-Band radar pulsed output and driver applications.AM82731-025 is capable of operation over a wide range of pulse widths, duty ...
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The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.AM82731-012 is capable of operaion over a wide range of pulse widths, duty...
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The AM82731-006 device is amedium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.AM82731-006 is capable of operation over a wide range of pulse widths, duty cycles, ...
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The AM82731-003 device is amedium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.AM82731-003 is capable of operation over a wide range of pulse widths, duty cycles, ...
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The AM82223-010 is a common base, silicon NPN bipolar transistor designed for high gain and efficiency in the 2.2 - 2.3 GHz frequency range.Suitable for hi-rel aerospace telemetry applications, the AM82223-010 is provide...
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The AM81720-012 is designed specifically for Telecommunications applications.The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ¥:1) under full rated conditions. The unit is an...
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The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range.An emitter-ballasted refractory-gold overlay die ge...
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The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range.An emitter site ballasted refractory/gold overlay d...
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The Am8127 is a kind of clock generator and controller which provides clock oscillator,frequency dividers and clock drivers for the complete array of AmZ8000 CPUs,peripherals and memory system configurations.There are so...
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The AM81214-060 device is a high power transistor specifically designed for L-Band radar pulsed outputand driver applications.The device is capable of operation over a wide range of pulse widths, duty cycles, and tempera...
Mfg:ST Pack:SO64 Vendor:Other Category:Other
The AM81214-030 device is a high power transistor specifically designed for L-Band Radar pulsed driver applications.The device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and i...
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The AM81214-015 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications.This device is capable of operation over a wide range of pulse widths, duty cycles, a...
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The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications.AM81214-006 is capable of operation over a wide range of pulse widths, duty cycles, and temperat...
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The AM80A-048L-120F18 is 240 Watts AM80A;Total Power: 240 Watts;Input Voltages: 24V, 48V, 150V, 300V, or 320V;No. of Outputs: Single.
Features of the AM80A-048L-120F18 are:(1)1MHz Fixed frequency; (2)100°C Basepla...
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The AM80912-085 is designed for specialized avionics applications including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.
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The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.This device is capable of operation over a wide range of pulse widths, duty cycles and tempe...
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The AM80912-015 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.
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The AM80912-005 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.
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AM80814-025 is a high power silicon Class C transistor designed for ultra-broadband L-Band radar applications.This device is capable of operation over a broad range of pulse widths and duty cycles. Low RF thermal resista...
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The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications.This device is capable of operation over a wide range of pulse widths, duty cycles and temperatu...
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The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range.AM80610-030 utilizes a rugged, overlay, emitterballasted L-Band die geometry to achi...
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The AM80610-018 possesses the features of refractory/gold metallization, emitter site ballasted, low thermal resistance, input/output matching, overlay geometry, metal/ceramic hermetic package, pout = 18 min. with 8.6 d...
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The Serial Communications Control (SCC)(Am8030/Am8530(H)) is a dual- channel, multi-protoool data communications peripheral designed for use with 8- and 16-bit microprocessors. The SCC(Am8030/Am8530(H)) functions as a se...
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