About SeekIC | Services | Payment | Advertisements service | Contact Us| Justway | Links
© 2008-2012 SeekIC.com Corp.All Rights Reserved.
Suppliers
DataSheet
Response in 12 hours
PTF 10160,PTF 10154,PTB 20175,
PTF 10160
Vendor:Other Category:Other
The PTF 10160 is an internally matched 85watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. PTF 10160 operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent...PTF 10154
Vendor:Other Category:Other
The PTF 10154 is an internally matched 85watt GOLDMOS FET intended for CDMA and TDMA applications from 1.93 to 1.99 GHz. This PTF 10154 operates at 43% efficiency with 11 dB gain. Nitride surface passivation and full gol...PTF 10153
Vendor:Other Category:Other
The PTF 10153 is an internally matched 60watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. PTF 10153 operates with 40% efficiency and 11.5 dB minimum gain. Nitride surface passivation and full...PTF 10149
Vendor:Other Category:Other
The PTF 10149 is an internally matched 70watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to 960 MHz. PTF 10149 operates with 50% efficiency and 16 dB typical gain. Nitride surface passivati...PTF 10139
Vendor:Other Category:Other
The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60watt device PTF 10139 operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full gold metallizatio...PTF 10138
Vendor:Other Category:Other
The PTF 10138 is a 60watt GOLDMOS FET intended for amplifier applications to 860-960 MHz. PTF 10138 operates at 48% efficiency with 12.5 dB gain. Nitride surface passivation and full gold metallization ensure excellent d...PTF 10137
Vendor:Other Category:Other
The PTF 10137 is a 12 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. PTF 10137 operates at 60% efficiency with 18 dB of gain. Nitride surface passivation and full gold metallization ensure ex...PTF 10136
Vendor:Other Category:Other
The PTF 10136 is a 6watt GOLDMOS FET intended for large signal amplifier applications from to 1.0 GHz. PTF 10136 operates at 57% efficiency with 19 dB typical gain. Nitride surface passivation and full gold metallization...PTF 10135
Vendor:Other Category:Other
The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. PTF 10135 is rated at 5 watts minimum output power. Nitride surface passivation and g...PTF 10134
Vendor:Other Category:Other
The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. PTF 10134 is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface passivation and g...PTF 10133
Vendor:Other Category:Other
The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications. This PTF 10133 operates at 50% efficiency with 13.5 dB of gain. Full gold metallization ensures excellent devic...PTF 10125
Vendor:Other Category:Other
The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. PTF 10125 is rated at 135 watts mini...PTF 10122
Vendor:Other Category:Other
The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. PTF 10122 is rated at 50 watts power output, with 11 dB of gain. Nitride...PTF 10120
Vendor:Other Category:Other
The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. PTF 10120 is rated at 120 watts power output. Nitride surface pa...PTF 10119
Vendor:Other Category:Other
The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. PTF 10119 is rated at 12 watts power output. Nitride surface passivati...PTF 10112
Vendor:Other Category:Other
The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. PTF 10112 is rated at 60 watts power output. Nitride surface pas...PTF 10111
Vendor:Other Category:Other
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. PTF 10111 operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excel...PTF 10107
Vendor:Other Category:Other
The PTF 10107 is a 5watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. PTF 10107 operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excell...PTF 10100
Vendor:Other Category:Other
The PTF 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. PTF 10100 is rated at 165 watts power output. Nitride s...PTF 10065
Vendor:Other Category:Other
The PTF 10065 is a 30watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. PTF 10065 typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent ...PTF 10053
Vendor:Other Category:Other
The PTF 10053 is a 12watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. PTF 10053 operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold metallization ensu...PTF 10052
Vendor:Other Category:Other
The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. PTF 10052 operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization ensure e...PTF 10048
Vendor:Other Category:Other
The PTF 10048 is an internally matched 30watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. PTF 10048 operates at 40% efficiency with 10.5 dB typical gain. Nitride surface passivation and full gold met...PTF 10045
Vendor:Other Category:Other
The PTF 10045 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.65 GHz. PTF 10045 is rated at 30 watts power output. Nitride surface passivation and gold ...PTF 10043
Vendor:Other Category:Other
The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, PTF 10043 operates at 45% efficiency with 12 dB gain. Nitride surface passivatio...PTF 10036
Vendor:Other Category:Other
The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure excellent device lifetime and...PTF 10031
Vendor:Other Category:Other
The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. PTF 10031 operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure e...PTF 10021
Vendor:Other Category:Other
The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. PTF 10021 is rated at 30 watts...PTF 10020
Vendor:Other Category:Other
The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and rel...PTF 10019
Vendor:Other Category:Other
The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range. Nitride surface passivation and full gold metallization ensure excellent device l...PTF 10015
Vendor:Other Category:Other
The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. PTF 10015 operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization...PTF 10009
Vendor:Other Category:Other
The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. PTF 10009 operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are use...PTF 10007
Vendor:Other Category:Other
The PTF 10007 is a 35 Watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and gold metallization ensure excellent d...PTF
Vendor:Other Category:Other
Metal Film Resistors, Precision, Ultra-High Stability PTFPTE5001D
Vendor:Other Category:Other
The PTE5001D is designed as precision differential pressure transmitters.PTE5001D has five features. The first one is it would have ±70 mbar to 10 bar or ±1 psi to 150 psi differential pressure. The next one is it would ...PTE2000G
Vendor:Other Category:Other
PTD-1A
Vendor:Other Category:Other
The PTD-1A is designed as programmable trigger delay which provides up to 16 channels of programmable delay from a single trigger. The time resolution os 10ns with a maximum delay of 99.99s. Programming may be done manua...PTCR
Vendor:Other Category:Other
PTCCL05H940EyE
Vendor:Other Category:Other
These directly heated thermistors PTCCL05H940EyE have a positive temperature coefficient and are primarily intended for overload protection. They consist of a naked disc with two tinned brass or copper clad steel leads a...PTCCL05H131EyE
Vendor:Other Category:Other
These directly heated thermistors PTCCL05H131EyE have a positive temperature coefficient and are primarily intended for overload protection. They consist of a naked disc with two tinned brass or copper clad steel leads a...PTC4001T
Vendor:Other Category:Other
NPN silicon planar epitaxial microwave transistor PTC4001T in a SOT440A metal ceramic flange package with collector connected to flange.PTC-01
Vendor:Other Category:Other
Programmer Unit 1A 24VDC supply (auto, 100-240VAC 50/60Hz) PTC-01PTB-84B
Vendor:Other Category:Other
PTB-84A
Vendor:Other Category:Other
PTB78560C
Vendor:Other Category:Other
The PTB78560C is a series of 30W rated isolated dc/dc converters, designed to operate from a standard 24V or 48V telecom central office (CO) supply. Housed in a 1*2 package, each model has a wide-adjust output voltage th...PTB78560B
Vendor:Other Category:Other
The PTB78560B is a series of 30W rated isolated dc/dc converters, designed to operate from a standard 24V or 48V telecom central office (CO) supply. Housed in a 1*2 package, each model has a wide-adjust output voltage th...PTB78560A
Vendor:Other Category:Other
The PTB78560A is a series of 30W rated isolated dc/dc converters, designed to operate from a standard 24V or 48V telecom central office (CO) supply. Housed in a 1*2 package, each model has a wide-adjust output voltage th...PTB78520W
Vendor:Other Category:Other
The PTB78520W is a 20-A rated, wide-input (18-60 V) isolated DC/DC converter that incorporates Auto-Track™ power-up sequencing. This allows these modules to simultaneously power up with any other downstream non-iso...PTB-64A
Vendor:Other Category:Other
PTB48560C
Vendor:Other Category:Other
The PTB48560C is a series of 30W rated isolated dc/dc converters, designed to operate from a standard -48V telecom central office (CO) supply. Housed in a 1*2 package, each model has a wide-adjust output voltage that can...PTB48560B
Vendor:Other Category:Other
The PTB48560B is a series of 30W rated isolated dc/dc converters, designed to operate from a standard -48V telecom central office (CO) supply. Housed in a 1*2 package, each model has a wide-adjust output voltage that can...PTB48560A
Vendor:Other Category:Other
The PTB48560A is a series of 30W rated isolated dc/dc converters, designed to operate from a standard -48V telecom central office (CO) supply. Housed in a 1*2 package, each model has a wide-adjust output voltage that can...PTB48540BAD
Mfg:TI D/C:07+ Vendor:Other Category:Other
The PTB48540BAD series of power modules is specifically designed to provide an isolated, low-voltage power source to a remote Powered Device (PD) in Power- Over-Ethernet (PoE) applications. These modules PTB48540BAD are ...PTB48540AAZ
Mfg:TI D/C:07+ Vendor:Texas Instruments Category:Power Supplies
CONV DC/DC 5V 2A SMD 13DIPThe PTB48540AAZ series of power modules is specifically designed to provide an isolated, low-voltage power source to a remote Powered Device (PD) in Power- Over-Ethernet (PoE) applications. These modules PTB48540AAZ are ...PTB48540AAS
Mfg:TI D/C:07+ Vendor:Texas Instruments Category:Power Supplies
CONV DC/DC 5V 2A SMD 13DIPThe PTB48540AAS series of power modules is specifically designed to provide an isolated, low-voltage power source to a remote Powered Device (PD) in Power- Over-Ethernet (PoE) applications. These modules PTB48540AAS are ...PTB48540AAH
Mfg:TI D/C:08+ Vendor:Texas Instruments Category:Power Supplies
CONV DC/DC 5V 2A HORZ T/H 13DIPThe PTB48540AAH series of power modules is specifically designed to provide an isolated, low-voltage power source to a remote Powered Device (PD) in Power- Over-Ethernet (PoE) applications. These modules PTB48540AAH are ...PTB48540
Vendor:Other Category:Other
The PTB48540 series of power modules is specifically designed to provide an isolated, low-voltage power source to a remote Powered Device (PD) in Power- Over-Ethernet (PoE) applications. These modules PTB48540 are rated ...PTB48502
Vendor:Other Category:Other
The PTB48502 power modules are a dual-output isolated DC/DC converter, designed to provide the logic supply voltages for AC-7 based xDSL applications. The PTB48500 is rated for 13 A of total output current, making it sui...PTB48501AAH
Mfg:TI D/C:08+ Vendor:Texas Instruments Category:Power Supplies
CNV DCDC 3.3/1.2V 16.5A HZ 10DIPThe PTB48501AAH power modules are a dual-output isolated DC/DC converter,designed to provide the logic supply voltages for AC-7 based xDSL applications.The PTB48500 is rated for 13 A of total output current, making it su...PTB48501
Vendor:Other Category:Other
The PTB48501 power modules are a dual-output isolated DC/DC converter, designed to provide the logic supply voltages for AC-7 based xDSL applications. The PTB48500 is rated for 13 A of total output current, making it sui...PTB48500AAZ
Mfg:TI D/C:07+ Vendor:Texas Instruments Category:Power Supplies
CONV DC/DC 3.3/1.2V 13A SMD10DIPThe PTB48500AAZ power modules are a dual-output isolated DC/DC converter,designed to provide the logic supply voltages for AC-7 based xDSL applications.The PTB48500 is rated for 13 A of total output current, making it su...PTB48500AAS
Mfg:TI D/C:08+ Vendor:Texas Instruments Category:Power Supplies
CONV DC/DC 3.3/1.2V 13A SMD10DIPThe PTB48500AAS power modules are a dual-output isolated DC/DC converter,designed to provide the logic supply voltages for AC-7 based xDSL applications.The PTB48500 is rated for 13 A of total output current, making it su...PTB48500AAH
Mfg:TI D/C:08+ Vendor:Texas Instruments Category:Power Supplies
CONV DC/DC 3.3/1.2V 13A TH 10DIPThe PTB48500AAH power modules are a dual-output isolated DC/DC converter,designed to provide the logic supply voltages for AC-7 based xDSL applications.The PTB48500 is rated for 13 A of total output current, making it su...PTB48500
Vendor:Other Category:Other
The PTB48500 power modules are a dual-output isolated DC/DC converter, designed to provide the logic supply voltages for AC-7 based xDSL applications. The PTB48500 is rated for 13 A of total output current, making PTB485...PTB32005X
Vendor:Other Category:Other
NPN silicon planar epitaxial microwave power transistor PTB32005X in a metal ceramic SOT440A flange package with base connected to the flange.PTB32003X
Vendor:Other Category:Other
NPN silicon planar epitaxial microwave power transistor PTB32003X in a metal ceramic SOT440A flange package with base connected to the flange.PTB32001X
Vendor:Other Category:Other
NPN silicon planar epitaxial microwave power transistor PTB32001X in a metal ceramic SOT440A flange package with base connected to the flange.PTB23006U
Vendor:Other Category:Other
NPN silicon planar epitaxial microwave power transistor PTB23006U in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.PTB23005X
Pack:TRANSISTOR Vendor:Other Category:Other
NPN silicon planar epitaxial microwave power transistor PTB23005X in a metal ceramic SOT440A flange package with base connected to the flange.PTB23003X
Pack:TRANSISTOR Vendor:Other Category:Other
NPN silicon planar epitaxial microwave power transistor PTB23003X in a metal ceramic SOT440A flange package with base connected to the flange.PTB23002U
Vendor:Other Category:Other
NPN silicon planar epitaxial microwave power transistor PTB23002U in a SOT440A hermetically sealed metal ceramic flange package, with base connected to flange.PTB23001X
Pack:TRANSISTOR Vendor:Other Category:Other
NPN silicon planar epitaxial microwave power transistor PTB23001X in a metal ceramic SOT440A flange package with base connected to the flange.PTB20135
Mfg:INFINEON Vendor:Other Category:Other
The PTB20135 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 85 watts minimum output power, PTB20135 may be used for both CW and PEP applications. Ion im...PTB 20264
Vendor:Other Category:Other
The PTB 20264 is an NPN, common emitter RF power transistor intended for 26 Vdc class AB operation from 1.8 to 1.9 GHz. Rated at 10 watts minimum output power, PTB 20264 may be used for both CW and PEP applications. Ion ...PTB 20258
Vendor:Other Category:Other
The PTB 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implanta...PTB 20249
Vendor:Other Category:Other
The PTB 20249 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 2.5 watts minimum output power, PTB 20249 may be used for both CW and PEP applications. I...PTB 20248
Vendor:Other Category:Other
The 20248 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 0.7 watts minimum output power, it may be used for both CW and PEP applications. Ion implantat...PTB 20245
Vendor:Other Category:Other
The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is specifically intended f...PTB 20239
Vendor:Other Category:Other
The PTB 20239 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 12 watts minimum output power, it may be used for both CW and PEP applications. Ion impla...PTB 20237
Vendor:Other Category:Other
The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implan...PTB 20235
Vendor:Other Category:Other
The PTB 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, PTB 20235 is specifically intended for operation as a final s...PTB 20230
Vendor:Other Category:Other
The PTB 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, PTB 20230 is specifically intended for o...PTB 20228
Vendor:Other Category:Other
The PTB 20228 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.626 to 1.661 GHz. Rated at 6 watts minimum output power, PTB 20228 may be used for both CW and PEP applications. I...PTB 20220
Vendor:Other Category:Other
The PTB 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications, PTB 20220 may be u...PTB 20219
Vendor:Other Category:Other
The PTB 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. PTB 20219 is rated at 70 watts minimum output power for both CW and PEP applicat...PTB 20216
Vendor:Other Category:Other
The PTB 20216 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, PTB 20216 may be used for both CW and ...PTB 20206
Vendor:Other Category:Other
The PTB 20206 is an NPN common emitter RF power transistor intended for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt minimum output power, PTB 20206 may be used for both CW and PEP applications. Ion im...PTB 20204
Vendor:Other Category:Other
The PTB 20204 is a class A, NPN, common emitter RF power transistor intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0 watt minimum output power, PTB 20204 may be used for both CW and PEP applications. Ion i...PTB 20195
Vendor:Other Category:Other
The PTB 20195 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150 watts minimum output power, PTB 20195 may be used for both CW and PEP applications. Ion...PTB 20193
Vendor:Other Category:Other
The PTB 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. PTB 20193 is rated at 60 watts minimum output power and may be used for both CW and PEP applications....PTB 20191
Vendor:Other Category:Other
The PTB 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. PTB 20191 is rated at 12 watts (CW) minimum output power, or 15 watts (PEP) output power. Ion impl...PTB 20190
Vendor:Other Category:Other
The PTB 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, PTB 20190 is specifically intended to ...PTB 20189
Vendor:Other Category:Other
The PTB 20189 is an NPN, common emitter RF power transistor intended for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1 watt minimum output power, PTB 20189 may be used for both CW and PEP applications. I...PTB 20188
Vendor:Other Category:Other
The PTB 20188 is an NPN common emitter UHF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. PTB 20188 is rated at 4 watts output power, and may be used for both CW and PEP applications. Ion imp...PTB 20187
Vendor:Other Category:Other
The PTB 20187 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4 watts minimum output power, PTB 20187 may be used for both CW and PEP applications. Ion...PTB 20180
Vendor:Other Category:Other
The PTB 20180 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, PTB 20180 may be used for both CW and PEP applications. Ion...PTB 20179
Vendor:Other Category:Other
The PTB 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, PTB 20179 may be used for both CW and PEP applications. Ion...PTB 20177
Vendor:Other Category:Other
The PTB 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, PTB 20177 may be used for both CW and PEP applications. Ion...PTB 20176
Vendor:Other Category:Other
The PTB 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, PTB 20176 is specifically designed for class A or AB linear power amplifie...PTB 20175
Vendor:Other Category:Other
The PTB 20175 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.9 to 2.0 GHz. PTB 20175 is rated at 55 watts minimum output power and may be used for both CW and PEP applications....