BUK7907-55ATE

MOSFET TRENCHPLUS MOSFET

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BUK7907-55ATE Picture
SeekIC No. : 00163302 Detail

BUK7907-55ATE: MOSFET TRENCHPLUS MOSFET

floor Price/Ceiling Price

Part Number:
BUK7907-55ATE
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 0.007 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Packaging : Rail
Continuous Drain Current : 140 A
Resistance Drain-Source RDS (on) : 0.007 Ohms


Features:

` Typical on-state resistance 5.8 m
` Q101 compliant
` ESD protection
` Monolithically integrated temperature sensor for overload protection.





Application

· Automotive and power switching:
· 12 V and 24 V high power motor drives, e.g. Electrical Power Assisted Steering (EPAS)
· Protected drive for lamps.





Pinout

  Connection Diagram






Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
-
55
V
VDGS
drain-gate voltage (DC)
-
55
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
-
140
A
-
75
A
Tmb = 100 °C; VGS = 5 V; Figure 2
-
75
S
IDM
drain current (peak value) Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
560
A
Ptot
total power dissipation Tmb = 25 °C; Figure 1
-
272
W
IGS(CL)
gate-source clamping current continuous
-
10
mA
tp = 5 ms; = 0.01
-
50
mA
Visol(FET-TSD)
FET to temperature sense diode
isolation voltage
-
±100
V
Tstg
storage temperature
-55
+175
°C
Tj
junction temperature
-55
+175
°C
Source-drain diode
IDR
reverse drain current (DC) Tmb = 25 °C
-
140
A
-
75
A
IDRM
pulsed reverse drain current Tmb = 25 °C; tp 10 s
-
560
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source clamping energy unclamped inductive load; ID = 68 A; VDS 55 V; VGS = 10 V; RGS = 50 k; starting Tj = 25 °C
-
460
mJ
Electrostatic discharge
Vesd
electrostatic discharge voltage; pins 1, 3, 5 Human Body Model; C = 100 pF; R = 1.5 k
-
6
KV
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.





Description

The BUK7907-55ATE is designed as N-channel enhancement mode field-effect power transistor in a plastic package using trenchMOS technology, featuring very low on state resistance, and trenchPLUS diodes for electrostatic discharge (ESD) and temperature sensing. Typical applications of BUK7907-55ATE is automotive and power switching which include 12V and 24V high power motor drives, e.g. electrical power assisted steering (EPAS) and protected drive for lamps.

BUK7907-55ATE has four features. The first one is typical on-state resistance 5.8 m. The second one is Q101 compliant. The third one is ESD protection. The fourth one is monolithically integrated temperature sensor for overload protection. That are all the main features.

Some limiting values have been concluded into several points of BUK7907-55ATE as follow. The first one is about its drain-source voltage which would be max 55V. The second one is about its drain-gate voltage which woud be max 55V. The third one is about its gate-source voltage (DC) which would be max ±20V. The fourth one is about its drain current (DC) which would be max 140A at 25°C and would be max 75A at 100°C. The fifth one is about its peak drain current which would be max 560A. The sixth one is about its total power dissipation which would be max 272W. The seventh one is about its gate-source clamp current which would be 10mA for countinuous and 50mA at tp=5ms and =0.01. The eighth one is about its storage temperature which would be from -55 to +175°C. The ninth one is about its junction temperature which would be from -55 to +175°C. The tenth one is about its reverse drain current (DC) which would be 140A. The eleventh one is about its peak reverse drain current which would be max 560A. The twelfth one is about its non-repetitive drain-source clamping energy which would be max 460mJ. The thirteenth one is about its electrostatic discharge voltage, pins 1, 3, 5 which would be max 6kV.

Also some characteristics about BUK7907-55ATE. The first one is about its drain-source breakdown voltage which would be min 55V at 25°C and min 50V at -55°C. The second one is about its gate-source threshold voltage which would be min 2V and typ 3V and max 4V at 25°C and min 1V at 175°C and max 4.4V at -55°C. And so on. For more information please contact us.








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