Features: • 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capability• 175°C maximum junction temperature ratingSpecifications Symbol ...
FQB13N10: Features: • 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V• Low gate charge ( typical 12 nC)• Low Crss ( typical 20 pF)• Fast switching• 100% avalanche tested• Im...
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| Symbol | Parameter |
FQB13N10 / FQI13N10 |
Units |
| VDSS | Drain-Source Voltage |
100 |
V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) |
12.8 |
A |
|
9.05 |
A | ||
| IDM | Drain Current - Pulsed (Note 1) |
51.2 |
A |
| VGSS | Gate-Source Voltage |
± 25 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
95 |
mJ |
| IAR | Avalanche Current (Note 1) |
12.8 |
A |
| EAR | Repetitive Avalanche Energy (Note 1) |
6.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
| PD | Power Dissipation (TA = 25°C) * |
3.75 |
W |
| Power Dissipation (TC = 25°C) - Derate above 25°C |
65 |
W | |
|
0.43 |
W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range |
-55to+175 |
°C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 |
°C |
These N-Channel enhancement mode power FQB13N10 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQB13N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the av alanche and commutation modes. FQB13N10 is well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.