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Part Number: GLT4160L04

 

 

 

 

Description: The GLT4160L04 is a high-performance CMOS dynamic random access memory containing 16,777,216 bits orga...


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GLT4160L04 General Description


The GLT4160L04 is a high-performance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The GLT4160L04 offers page cycle access with Extended Data Output. The GLT4160L04 has 11 row- and 11 column-addresses, and accepts 2048-cycle refresh in 32 ms.

The GLT4160L04 provides EDO PAGE MODE operation which allows for fast data access within a row-address defined boundary, up to 2048 x 4 bits with cycle times as short as 18ns.

GLT4160L04 Maximum Ratings

Operating Temperature, TA (ambient)
                       .....................................................0°C to
 +70°C
  For Extended Temperature...................-20°C to 85°C
  Storage Temperature(plastic)...........-55°C to +150°C
  Voltage Relative to VSS............................-0.5V to + 4.6V
  Short Circuit Output Current..................................20mA
  Power Dissipation...................................................1.0W

*Note: Operation above Absolute Maximum Ratings can aversely affect device reliability.

GLT4160L04 Features

· 4,194,304 words by 4 bits organization.
· Fast access time and cycle time
· Low power dissipation.
· Read-Modify-Write, RAS -Only Refresh, CAS -Before-RAS Refresh, Hidden Refresh.
· 2,048 refresh cycles per 32ms.
· Available in 300 mil 26(24) SOJ and TSOPII.
· 3.3V±0.3V Vcc Power Supply voltage.
· All inputs and Outputs are LVTTL compatible.
· Extended Data-Out (EDO) Page access cycle.
· Self-refresh Capability. (S-Version).

GLT4160L04 Connection Diagram

GLT4160L04  Connection Diagram

GLT4160L04 datasheet

GLT4160L04E-40J3
PDF/DataSheet Download

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