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IPS03N03LAG

MOSFET N-KANAL POWER MOS

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SeekIC No. : 00163585 Detail

IPS03N03LAG: MOSFET N-KANAL POWER MOS

IPS03N03LAG Data Sheet

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Part Number:
IPS03N03LAG
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 5.3 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Drain-Source Breakdown Voltage : 25 V
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Continuous Drain Current : 90 A
Packaging : Tube
Package / Case : TO-251
Resistance Drain-Source RDS (on) : 5.3 m Ohms


Features:

• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID TC=25 °C 90 A
TC=100 °C 90 A
Pulsed drain current ID,pulse TC=25 °C 360 A
Avalanche energy, single pulse EAS ID=77 A, RGS=25 Ω 300 mJ
Reverse diode dv /dt dv /dt ID=80 A, VDS=20 V,
di /dt =200 A/µs,
Tj,max=175 °C		 6 kV/µs
Gate source voltage VGS   ±20 V
Power dissipation Ptot TC=25 °C 115 W
Operating and storage temperature Tj, Tstg   -55 ... 175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  



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