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IRFR410

Features: • 1.5A, 500V• rDS(ON) = 7.000• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• High Input Impedance• 150 Operating Temperature• Related Literature - TB334 Guidelines for Soldering Surface...

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SeekIC No. : 004377379 Detail

IRFR410: Features: • 1.5A, 500V• rDS(ON) = 7.000• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• High Input Impedance&...

IRFR410 Data Sheet

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Part Number:
IRFR410
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1.5A, 500V
• rDS(ON) = 7.000
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
• 150 Operating Temperature
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Pinout

Connection Diagram


Specifications

Parameters Symbol IRFR410, IRFU410 Unit
Drain to Source Voltage VDS 500 V
Drain to Gate Voltage (RGS = 20k) VDGR 500 V
Continuous Drain Current
TC = 100		 ID 1.5
1.2		 A
Pulsed Drain Current IDM 3.0 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 42 W
Linear Derating Factor   0.33 W/
Single Pulse Avalanche Rating (See Figure 5) EAS Refer to UIS Curve mJ
Operating and Storage Temperature TJ, TSTG -55 to 150 °C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief 334
TL
Tpkg
300
260
°C
°C



Description

These are N-Channel enhancement mode silicon gate power field effect transistors of the IRFR410. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.




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