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MFG:NS  Package Cooled:TO-220  D/C:08+  

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Part Number: NDP4060L

 

MFG: NS

Package Cooled: TO-220

D/C: 08+

Description: These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchi...


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NDP4060L General Description


These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP4060L Maximum Ratings

Symbol
Parameter
NDP4060L
NDB4060L
Units
VDSS Drain-Source Voltage
60
V
VDGR Drain-Gate Voltage (RGS 1 M)
60
V
VGSS Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 µs)
± 16
V
± 25
ID Drain Current - Continuous
- Pulsed
15
A
45
PD Total Power Dissipation @ TC = 25°C
Derate above 25°C
50
W
0.33
W/
TJ,TSTG Operating and Storage Temperature Range
-65 to 175
TL Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275

NDP4060L Features

`15A, 60V. RDS(ON) = 0.1 @ VGS = 5V
`Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

NDP4060L datasheet

NDP4060L
PDF/DataSheet Download

  • Datasheet: NDP4060L
  • File Size: 69961 KB
  • Manufacturer: FAIRCHILD [Fairchild Semiconductor]
  • Click here to Download

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