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MFG:KA Package Cooled:TO
Part Number: NDP408BE
MFG: KA
Package Cooled: TO
Description: These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
- Table of contents:
NDP408BE
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Suppliers
DataSheet
General Description
NDP408BE General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP408BE Maximum Ratings
|
Symbol |
Parameter |
NDP408A NDP408AE NDB408A NDB408AE |
NDP408B NDP408BE NDB408B NDB408BE |
Units |
|
VDSS |
Drain-Source Voltage |
60 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
60 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
12 |
11 |
A |
|
36 |
33 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
50 |
W | |
|
0.33 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDP408BE Features
·12 and 11A, 80V. RDS(ON) = 0.16 and 0.20W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP408BE
PDF/DataSheet Download
- Datasheet: NDP408BE
- File Size: 74813 KB
- Manufacturer: FAIRCHILD [Fairchild Semiconductor]
- Click here to Download
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NDP408BE Relative Products
NDP408B
These N-channel enhancement mode power field effect transistors NDP408B are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide super...
NDP408AE
These N-channel enhancement mode power field effect transistors NDP408AE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide supe...
NDP408A
These N-channel enhancement mode power field effect transistors NDP408Aare produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superi...
NDP4060L
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NDP4060
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NDP4050L
These logic level N-Channel enhancement mode power field effect transistors NDP4050L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, ...
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