MFG:PHI Package Cooled:TO.220-3 D/C:0209+
MFG: PHI
Package Cooled: TO.220-3
D/C: 0209+
Description: N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.Pro...
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | Tj =25 to 175 | - | 25 | V |
| VDGR | drain-gate voltage (DC) | Tj =25 to 175 ; RGS = 20 k | - | 25 | V |
| VGS | gate-source voltage | - | ±15 | V | |
| VGSM | gate-source voltage | TP 50 s; pulsed; duty cycle = 25%;Tj 150 | ±20 | ||
| ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 40 | A |
| Tmb = 100 ; VGS = 5 V; Figure 2 | - | 30 | A | ||
| IDM | peak drain current | Tmb = 100 ; pulsed; tp 10 s; Figure 3 | - | 160 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 65 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tmb = 25 | - | 40 | A |
| ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - | 160 | A |
| Avalanche ruggedness | |||||
| EAS | non-repetitive avalanche energy | unclamped inductive load; ID =40 A; tp = 0.1 ms; VDD 15 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 |
- | 60 | mJ |
PHP45N03LTA
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