PHT2NQ10T,135

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-261-4, TO-261AA
Power - Max: 6.25W
Current - Continuous Drain (Id) @ 25° C: 2.5A
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Gate Charge (Qg) @ Vgs: 5.1nC @ 10V
Input Capacitance (Ciss) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 430 mOhm @ 1.75A, 10V


Parameters:

Technical/Catalog Information	PHT2NQ10T,135
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	2.5A
Rds On (Max) @ Id, Vgs	430 mOhm @ 1.75A, 10V
Input Capacitance (Ciss) @ Vds	160pF @ 25V
Power - Max	6.25W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5.1nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Drawing Number	568; SOT223; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHT2NQ10T,135 PHT2NQ10T,135