MOSFET 60V 4.6/5.0A 1.4/1.5
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DescriptionThe feature of SI7501DN-T1 are as follows: (1)TrenchFET Power MOSFET; (2)New Low Therma...
| Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 4.6 A, 5 A | ||
| Resistance Drain-Source RDS (on) : | 75 mOhms, 64 mOhms | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | PowerPAK SO-8 | Packaging : | Reel |