Series: -
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Mounting Type: Surface Mount
Voltage - DC Reverse (Vr) (Max): 600V
Packaging: Bulk
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Manufacturer: Infineon Technologies
Current - Average Rectified (Io): 5A (DC)
Package / Case: Wafer
Supplier Device Package: Sawn on foil
Features: · Worlds first 600V Schottky diode
· Revolutionary semiconductor material - Silicon Carbide
· Switching behavior benchmark
· No reverse recovery
· No temperature influence on the switching behavior
· Ideal diode for Power Factor Correction
· No forward recoveryApplication· SMPS, PFC, snubberSpecifications
|
Parameter |
Symbol |
Condition |
Value |
Unit |
| Repetitive peak reverse voltage |
VRRM |
|
600 |
V
|
| Non repetitive peak forward current |
VRSM |
|
600 |
Continuous forward current limited by
Tjmax |
IF |
|
5 |
A |
Single pulse forward current
(depending on wire bond configuration) |
IFSM |
TC =25° C, tP =10 ms sinusoidal |
|
Maximum repetitive forward current
limited by Tjmax |
IFRM |
TC = 100°C, Tj=150°C,
D=0.1 |
21 |
| Non repetitive peak forward current |
IFMAX |
TC =25°C, tp=10s |
50 |
Operating junction and storage
temperature |
Tj,Tstg |
|
-55...+175 |
°C |
SIDC16D60SIC3 Data Sheet
