Features: TYPICAL RDS(on) = 0.11 WEXTREMELY HIGH dv/dt CAPABILITY± 30V GATE TO SOURCE VOLTAGE RATING100% AVALANCHE TESTEDLOW INTRINSIC CAPACITANCEGATE CHARGE MINIMIZEDREDUCED VOLTAGE SPREADApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSWITCH MODE POWER SUPPLY (SMPS)DC-AC CONVERTER FOR WELDING EQUIP...
STE38NB50F: Features: TYPICAL RDS(on) = 0.11 WEXTREMELY HIGH dv/dt CAPABILITY± 30V GATE TO SOURCE VOLTAGE RATING100% AVALANCHE TESTEDLOW INTRINSIC CAPACITANCEGATE CHARGE MINIMIZEDREDUCED VOLTAGE SPREADApplicati...
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Tantalum Capacitors - Wet 16volts 3300uF 20% T3 case size
|
Symbol |
Parameter |
Value |
Unit | |
|
VCES |
Drain-source Voltage (VGS = 0) |
500 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
500 |
V | |
|
VGE |
Gate-Emitter Voltage |
± 30 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 oC |
38 |
A | |
|
Id |
Drain Current (continuous) at Tc = 100 oC |
24 |
A | |
|
ICM(•) |
Drain Current (pulsed) |
152 |
A | |
|
Ptot |
Total Dissipation at Tc = 25 oC |
400 |
W | |
|
Derating Factor |
3.2 |
W/oC | ||
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | |
|
Tstg |
Storage Temperature |
-55 to 150 |
oC | |
|
Vj |
Max. Operating Junction Temperature |
2500 |
oC | |
Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.