STE38NB50F

Features: TYPICAL RDS(on) = 0.11 WEXTREMELY HIGH dv/dt CAPABILITY± 30V GATE TO SOURCE VOLTAGE RATING100% AVALANCHE TESTEDLOW INTRINSIC CAPACITANCEGATE CHARGE MINIMIZEDREDUCED VOLTAGE SPREADApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSWITCH MODE POWER SUPPLY (SMPS)DC-AC CONVERTER FOR WELDING EQUIP...

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SeekIC No. : 004507574 Detail

STE38NB50F: Features: TYPICAL RDS(on) = 0.11 WEXTREMELY HIGH dv/dt CAPABILITY± 30V GATE TO SOURCE VOLTAGE RATING100% AVALANCHE TESTEDLOW INTRINSIC CAPACITANCEGATE CHARGE MINIMIZEDREDUCED VOLTAGE SPREADApplicati...

floor Price/Ceiling Price

Part Number:
STE38NB50F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.11 W
 EXTREMELY HIGH dv/dt CAPABILITY
 ± 30V GATE TO SOURCE VOLTAGE RATING
 100% AVALANCHE TESTED
 LOW INTRINSIC CAPACITANCE
 GATE CHARGE MINIMIZED
 REDUCED VOLTAGE SPREAD



Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITCH MODE POWER SUPPLY (SMPS)
 DC-AC CONVERTER FOR WELDING EQUIPMENT AND
   UNINTERRUPTABLE POWERSUPPLY AND MOTOR DRIVE



Specifications

Symbol

Parameter

Value
Unit
VCES

Drain-source Voltage (VGS = 0)

500
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

500

V

VGE

Gate-Emitter Voltage

± 30
V
ID

Drain Current (continuous) at Tc = 25 oC

38
A
Id

Drain Current (continuous) at Tc = 100 oC

24
A
ICM(•)

Drain Current (pulsed)

152
A
Ptot

Total Dissipation at Tc = 25 oC

400
W

Derating Factor

3.2
W/oC
dv/dt(1)

Peak Diode Recovery voltage slope

4.5
V/ns
Tstg

Storage Temperature

-55 to 150

oC

Vj

Max. Operating Junction Temperature

2500

oC




Description

Using the latest high voltage MESH OVERLAY] process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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