STP9NK60ZD

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 0.95 Ohms


Features:

YPICAL RDS(on) = 0.85 Ω
ERY HIGH dv/dt CAPABILITY
00% AVALANCHE TESTED
ATE CHARGE MINIMIZED
OW INTRINSIC CAPACITANCES
AST INTERNAL RECOVERY DIODE


Application

ID BALLAST
VS PHASE-SHIFT FULL BRIDGE
    CONVERTERS


Specifications

Symbol	Parameter	Value		Unit
		TO-220 / D2PAK	TO-220FP
VDS	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)	600		V
VGS	Gate- source Voltage	± 30		V
ID	Drain Current (continuous)at TC =25	7.0	7.0*)	A
ID	Drain Current (continuous)at TC =100	4.3	4.3(*)	A
IDM ()	Drain Current (pulsed)	28	28(*)	A
PTOT	Total Dissipation at TC = 25	125	30	W
	Derating Factor	1	0.24	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	4000		V
dv/dt (1)	Peak Diode Recovery voltage slope	15		V /ns
VISO	Insulation Withstand Voltage (DC)	-	2500	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150

Description

The STP9NK60ZD SuperFREDMesh™ series associates all ad-vantages of reduced on-resistance, zener gate pro-tection and very high dv/dt capability with a Fast body-drain recovery diode. Such series comple-ments the "FDmesh™" Advanced Technology.


Parameters:

Technical/Catalog Information	STP9NK60ZD
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	950 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	1110pF @ 25V
Power - Max	125W
Packaging	Tube
Gate Charge (Qg) @ Vgs	53nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP9NK60ZD STP9NK60ZD 497 4387 5 ND 49743875ND 497-4387-5