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SI4830DY

MOSFET 30V 7.5A 2W

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SeekIC No. : 00166906 Detail

SI4830DY: MOSFET 30V 7.5A 2W

SI4830DY Data Sheet

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Part Number:
SI4830DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.7 A
Resistance Drain-Source RDS (on) : 22 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO-8    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Package / Case : SO-8
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Resistance Drain-Source RDS (on) : 22 mOhms
Continuous Drain Current : 5.7 A


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID 7.5 5.7 A
TA = 70 6.0 4.6
Pulsed Drain Current IDM 30
Continuous Source Current (Diode Conduction)a IS 1.7 0.9
Maximum Power Dissipationa TA = 25 PD 2.0 1.1 W
TA = 70 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150



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