Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK™ Package withLow 1.07-mm Profile· PWM Optimized for High EfficiencyApplication· Point-of-Load Synchronous Rectifier- 5-V or 3.3-V BUS Step Down- Qg Optimized for 500-kHz Operation· Synchronous Buck, Shoot-Thru Resis...
Si7540DP: Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK™ Package withLow 1.07-mm Profile· PWM Optimized for High EfficiencyApplication· Point-of-Load Synchronous Rectifier...
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DescriptionThe feature of SI7501DN-T1 are as follows: (1)TrenchFET Power MOSFET; (2)New Low Therma...
| Parameter | Symbol | N-Channel | P-Channel | Unit | |||
| 10 secs | Steady State | 10 secs | Steady State | ||||
| Drain-Source Voltage | VDS | 20 | -20 | V | |||
| Gate-Source Voltage | VGS | ±8 | ±8 | ||||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | 11.8 | 7.6 | -8.9 | -5.7 | A |
| TA = 70 | 9.5 | 6.1 | -7.1 | -4.6 | |||
| Pulsed Drain Current | IDM | 20 | |||||
| Continuous Source Current (Diode Conduction)a | IS | 2.9 | 1.1 | -2.9 | -1.1 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.5 | 1.4 | 3.5 | 1.4 | W |
| TA = 70 | 2.2 | 0.9 | 2.2 | 0.9 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||||