TIM7785-60SL

LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
HIGH POWER P1dB=48.0dBm at 7.7GHz to 8.5GHz
HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.