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FDGDFGDF, FDH038AN08AI, FDH047AN08A0

FDGDFGDF, FDH038AN08AI, FDH047AN08A0 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:dfgdf  D/C:dfdf

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FDGDFGDF, FDH038AN08AI, FDH047AN08A0 Datasheet download

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Part Number: FDH047AN08A0

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: dfgdf

D/C: dfdf

Description: MOSFET N-CH 75V 80A TO-247

 

 
 
 
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About FDG311N

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Datasheet: FDG311N

File Size: 91686 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • FDH6328

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About FDH038AN08A1

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Datasheet: FDH038AN08A1

File Size: 219993 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • SAMT HK CO LTD   Hong
    Contact: Mr.NickLEE  
    Tel: 852--92323009
    Fax: 852--2890 7890
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  • FDH047AN08A0

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  • SAMT HK CO LTD   Hong
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  • FDH333

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  • ALCON TECHNOLOGY CO., LTD.   China
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  • ALCON TECHNOLOGY CO., LTD.   China
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    Tel: 86-755-83803182
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  • FDH44N50

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 300000  Adddate: 2024-03-29
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)

About FDH047AN08A0

PDF/DataSheet Download

Datasheet: FDH047AN08A0

File Size: 620992 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDH047AN08A0 Parameters

Technical/Catalog InformationFDH047AN08A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs4.7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 6600pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs138nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDH047AN08A0
FDH047AN08A0

FDH047AN08A0 Maximum Ratings

 

Symbol

Parameter

Ratings

Units

VDSS

Drain to Source Voltage

75

V

VGS

Gate to Source Voltage

±20

V

ID

Drain Current

80

A

Continuous (TC < 144, VGS = 10V)

Continuous (TC = 25, VGS = 10V, with RJA = 62 /W)

15

A

Pulsed

Figure 4

A

EAS

Single Pulse Avalanche Energy (Note 1)

475

mJ

PD

Power dissipation

310

W

Derate above 25

2.0

W/

TJ , TSTG

Operating and Storage Temperature

-55to
175

FDH047AN08A0 Features

* r DS(ON)  = 4.0m(Typ.), VGS = 10V, ID  = 80A 
* Qg (tot) = 92nC (Typ.), VGS = 10V
* Low Miller Charge
* Low QRR  Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101

FDH047AN08A0 Typical Application

* 42V Automotive Load Control
* Starter / Alternator Systems
* Electronic Power Steering Systems
* Electronic Valve Train Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V systems

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